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SnO 2 nanostructures have been prepared on quartz and porous silicon (PS) substrates using rapid photothermal oxidation at 600°C and different oxidation times. The analysis and characterizations were researched. The photovoltage properties of Au/n-SnO 2 /p-PSi/c-Si solar cell are investigated under irradiation of Nd:YAG laser pulses. The PS is synthesized on single crystalline p-type Si using electrochemical etching in aqueous hydrofluoric acid at current density 25 mA/cm 2 for 30 min etching time. The photovoltage properties are found to be depended on laser flounces.

Transparent and conducting SnO 2 thin film has been produced on (quartz, ITO, silicon and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600°C oxidation temperature and different oxidation time. The structural, optical, electrical properties, scan electron microscope and atomic force microscope of the prepared films were studied. The transmittance T in the visible and NIR was investigated; the allowed direct energy gap was determined to be 3.18 eV at optimum condition of 600°C and 90 s. The dependence of the resistivity on the film thickness and oxidation time has been studied. The optimum thickness of high transmittance and lowest resistivity is about 150 nm for SnO 2 , where q = 1.7 9 10 -3 X cm and T = 88 %. The sensitivity behaviors of the n-SnO 2 /p-PSi/c-Si-based gas sensor to H 2 and CO 2 gas were investigated. The film sensitivity dependence on the temperature and test gas concentration was tested and the optimum operation temperature was determined at around 250 and 300°C with an applied voltage was constant at 2.5 V.

SnO 2 thin films were prepared by using rapid thermal oxidation (RTO) of Sn at oxidation temperature 873 K and oxidation time 90 sec on semiconductor n-type and p-type silicon substrate. In order to characterize the prepared device, the electrical properties have been measured which revealed that the barrier height is greatly depended on interfacial layer thickness (SiO 2). The value of peak response (n-SnO 2 /SiO 2 /n-Si) device was 0.16 A/W which is greater than that of (n-SnO 2 /SiO 2 /p-Si) device whose value was 0.12 A/W, while the rise time was found to be shorter.

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