2013
DOI: 10.1007/s13204-013-0244-7
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Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation

Abstract: Transparent and conducting SnO 2 thin film has been produced on (quartz, ITO, silicon and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600°C oxidation temperature and different oxidation time. The structural, optical, electrical properties, scan electron microscope and atomic force microscope of the prepared films were studied. The transmittance T in the visible and NIR was investigated; the allowed direct energy gap was determined to be 3.18 eV at optimum condition of 600… Show more

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Cited by 32 publications
(9 citation statements)
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References 38 publications
(48 reference statements)
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“…The sensitivity behaviors of the Au/n-SnO 2 /p-PSi/c-Si sensors to H 2 and CO 2 gases were achieved sensitivity, accordingly about 60% and 95% at temperature 250-300 °C [11]. Pt-catalysed SnO 2 / Porous-silicon hybrid sensor of CO increased by a factor of 7.5 compared to the ones on for 10min and c-Si (at 100 °C) [12].…”
Section: Introductionmentioning
confidence: 92%
See 1 more Smart Citation
“…The sensitivity behaviors of the Au/n-SnO 2 /p-PSi/c-Si sensors to H 2 and CO 2 gases were achieved sensitivity, accordingly about 60% and 95% at temperature 250-300 °C [11]. Pt-catalysed SnO 2 / Porous-silicon hybrid sensor of CO increased by a factor of 7.5 compared to the ones on for 10min and c-Si (at 100 °C) [12].…”
Section: Introductionmentioning
confidence: 92%
“…The sensitivity of the prepared on the glass is better than on porous silicon. Significant sensing response of SnO 2 /porous silicon heterojunctions could be obtained at sufficiently high temperature [11][12][13]. The crystallin (for example, lattice constants (a,c)), and band gaps of SnO and SnO 2 are significantly different [16].…”
Section: Introductionmentioning
confidence: 99%
“…where D is grain size in (nm), K is constant depended on the used X-Ray wave length, β is the full width at half maximum, Ɵ is the diffracted angle, δ is the density of dislocation which refers to the number of dislocations in a unit volume of a crystalline material and ε is the stress [23][24][25][26][27][28][29][30].…”
Section: Structural Studiesmentioning
confidence: 99%
“…Generally, in resistive gas-sensing method, bridging oxygen forms layer on sensing material, through which electron transfer takes place (Alwan and Dheyab 2017). The transfers of electrons result in resistance change through which sensing response is measured (Muhsien et al 2014). …”
Section: Introductionmentioning
confidence: 99%