High-temperature annealing effects on tin oxide films

Abstract

Transparent conducting tin oxide films were prepared by a chemical vapour deposition technique. The films were deposited at substrate temperatures of 400, 450 and 500 degrees C. The films were annealed (above the deposition temperatures) up to 1000 degrees C in various gas atmospheres (argon, oxygen, nitrogen and air). It is observed that there is an initial decrease in resistivity up to a temperature of 700 degrees C which is followed by an increase in resistivity beyond 700 degrees C. X-ray and electron diffraction studies have been carried out on the annealed films and the behaviour of this decrease and increase in resistivity has been explained.

Annealed SnO2 thin films: Structural, electrical and their magnetic properties

“…031116 with rutile phase and space group P4 2 /mnm. The appearance of XRD peaks in annealed samples may be due to the improvement in the crystallinity of the pockets of amorphous zones and the grain growth of the polycrystalline phase of SnO 2 [36].…”

Preparation and characterization of p-type semiconducting tin oxide thin film gas sensors

“…10 The physical, chemical, and electrical properties of the sputtered thin film are greatly affected by the sputtering and calcination parameters, such as the pressure, power, temperature, etc. [11][12][13][14] In general, oxygen content in semiconductor oxide will affect its behavior as n-type or p-type conducting. Bellingham et al 15 have observed that high oxygen pressure in sputtering process resulted in p-type conducting film.…”

Highly Crystallized Tin Dioxide Microwires toward Ultraviolet Photodetector and Humidity Sensor with High Performances

“…The growth mechanism of the SnO 2 MWs is regarded as a vapor-solid process, since no metal has been used as catalyst and no particle can be found on the tip of the SnO 2 MWs, as shown in Figure 1a. The following chemical reactions are proposed to take place during the thermal evaporation process: [19,[32][33][34][35][36] C s SnO s nO g CO g 2 S ( ) ( )…”

“…[17,18] In addition, the optical and electrical properties of SnO 2 are also greatly influenced by the crystallinity and defect states, which can be modulated through the alteration of some processing factors such as temperature, gas atmosphere, raw materials, dopant element, and concentration. [18,19] Generally, the SnO 2 in its stoichiometry form is good insulator, [2,4] however, nominally undoped SnO 2 is highly conductive and transparent due to the extremely low formation energies of the intrinsic defects (i.e., tin interstitial and oxygen vacancy), which donate electrons to the conduction band without increasing optical interband absorption. [2,4] Fortunately, these disadvantages can be attenuated through rational design.…”