1981
DOI: 10.1002/pssa.2210630153
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Preparation and properties of indium oxide films

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1983
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Cited by 22 publications
(7 citation statements)
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“…Several methods have been used to prepare In 2 O 3 thin films, such as dc and rf sputtering [21][22][23], reactive evaporation [24,25], evaporation of metallic indium and subsequent oxidation [26,27], chemical vapor deposition [28], spray pyrolysis [29,30], sol-gel [16,31] and laser ablation [32]. Metal organic chemical vapor deposition (MOCVD) technique is a new and low cost approach for thin film deposition of indium oxide films, which offers the opportunity to control the stoichiometry and morphology by varying the process parameters.…”
Section: Introductionmentioning
confidence: 99%
“…Several methods have been used to prepare In 2 O 3 thin films, such as dc and rf sputtering [21][22][23], reactive evaporation [24,25], evaporation of metallic indium and subsequent oxidation [26,27], chemical vapor deposition [28], spray pyrolysis [29,30], sol-gel [16,31] and laser ablation [32]. Metal organic chemical vapor deposition (MOCVD) technique is a new and low cost approach for thin film deposition of indium oxide films, which offers the opportunity to control the stoichiometry and morphology by varying the process parameters.…”
Section: Introductionmentioning
confidence: 99%
“…The distribution of cations depends on the method of preparation of these compounds [24][25][26][27][28] as well as the processing parameters therein, such as the thermal history of sample and the composition [29][30][31][32].…”
Section: Introductionmentioning
confidence: 99%
“…More recently, other defects like oxygen antisites, indium interstitials, oxygen interstitials, and indium vacancies were found to be responsible for PL emission in In 2 O 3 [21]. In general, the various effects listed above provide additional transition paths for carriers through energy states created by the defects [22,23]. Thus, the shift and expansion of the PL spectra may be explained as a modification of surface defect states due to the PVA coating, leading to additional carrier transition paths.…”
Section: Methodsmentioning
confidence: 89%