The current-voltage characteristics and the photoresponse of metal-porous Si–p-type Si heterostructures have been studied. It is shown that the common interpretation of the current-voltage characteristics, which assumes that the current is limited by the Schottky barrier at the metal-porous Si interface, is wrong. An alternative explanation based on the electric-field dependence of the porous Si conductivity is suggested. It is shown that the rectifying behavior originates from a depletion inside the c-Si substrate at its interface to the porous Si.
In this contribution we investigate the transversal mode instability behavior of a ytterbium-doped commercial 20/400 fiber and obtain 2.9 kW of output power after optimizing the influencing parameters. In this context, we evaluate the influence of the bend diameter and the pump wavelength within the scope of the absorption length and the length of the fiber. Furthermore, with a newly developed fiber we report on 4.4 kW of single-mode output power at 40 cm bend diameter.
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