We show that light emission from different systems of silicon nanocrystals does behave as expected for indirect-band-gap quantum dots. Photoluminescence excited on the low energy part of the distribution of Si nanocrystals exhibits a set of narrow peaks associated with Si TA and TO momentumconserving phonon-assisted optical transitions. These spectra allow us to determine the ratio of nophonon transitions to TA and TO phonon-assisted processes over a wide range of confinement energies. The ratio between these recombination channels changes by 2 orders of magnitude with increasing confinement energy. For confinement energies above 0.7 eV the radiative transitions are governed by no-phonon quasidirect processes. [S0031-9007 (98)07199-3] PACS numbers: 78.55.Ap, 78.66.Li

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Porous silicon (p type) has been exposed to several chemical vapors at various partial pressures. The quenching of the photoluminescence by the adsorbates has been quantified and correlation to the electrical conductivity of the porous silicon sample has been studied. Some gases, e.g., water and benzene, have a small effect on the photoluminescence and on the conductivity, while others, e.g., methanol, reduce the photoluminescence by a factor of 2 and increase the conductivity by four orders of magnitude. This is accompanied with a qualitative change in the current-voltage characteristics. These changes have been found to be reversible and the temporal behavior of the system has been investigated.

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