Hopping transport on a fractal: ac conductivity of porous silicon

Ben‐Chorin, M.; Möller, Friedrich; Koch, F.; Schirmacher, Walter; Eberhard, Marc A.

doi:10.1103/physrevb.51.2199

Cited by 182 publications

(92 citation statements)

References 42 publications

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“…Sometimes it is found that ⍀ ϰ / ͑0͒ gives better results, [17][18][19] but in other cases ⍀ ϰ / ͑0͒T does. 6,8 We show in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…16 That the issue about how to scale correctly is a subtle one is clear from literature. Sometimes it is found that ⍀ϰ / ͑0͒ [17][18][19] drastically increases the quality of the scaling curve as compared to ⍀ϰ / ͑0͒T. 6,8 The latter finding, ⍀ϰ / ͑0͒T, can be interpreted as a manifestation of the "Curie law" with C = ⌬⑀ ϳ 1/T.…”

Section: Introductionmentioning

confidence: 99%

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Universality of AC conductivity: Random site-energy model with Fermi statistics

2006

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“…Sometimes it is found that ⍀ ϰ / ͑0͒ gives better results, [17][18][19] but in other cases ⍀ ϰ / ͑0͒T does. 6,8 We show in Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Universality of AC conductivity: Random site-energy model with Fermi statistics

2006

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“…Random-walk dimensions have also been estimated for porous silicon samples from DC and AC transport measurements [31,32]. Ben-Chorin et al [32] estimate d W ¼ 4 from the frequency dependent AC conductivity of an unilluminated sample with 50-60% porosity.…”

Section: Semiclassical Transport On a Fractalmentioning

confidence: 99%

Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

Rao¹,

Schiff²,

Tsybeskov³

et al. 2002

Chemical Physics

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We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very small ð<10 À4 cm 2 =V sÞ compared to homogeneous crystalline silicon. The mobilities are dispersive (i.e., having a power-law decay with time or length-scale), but are only weakly temperature-dependent. The dispersion parameter lies in the range 0.55-0.65 for both electrons and holes. We conclude that the drift mobilities are limited by the nanoporous geometry, and not by disorder-induced localized states acting as traps. This conclusion is surprising in the context of luminescence models based on radiative recombination of localized excitons.

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“…Ac impedance and other frequencyresolved techniques have been already applied to porous semiconductor electrodes of the materials TiO 2 , 1-8 GaP, 9 and silicon. [10][11][12] Advanced models are required for the impedance measurements of porous electrodes to be properly described and understood, due to the complexity of both the structure and the processes involved. In this paper we aim at providing new methods for analysis of porous film electrodes by electrochemical impedance.…”

Section: Introductionmentioning

confidence: 99%

Doubling Exponent Models for the Analysis of Porous Film Electrodes by Impedance. Relaxation of TiO₂ Nanoporous in Aqueous Solution

et al. 2000

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The paper is concerned with the small signal ac impedance of porous film electrodes in contact with solution. An overview is presented of the standard transmission line model with two transport channels and a crosswise element. The simplest configurations are discussed: a single resistance in one of the channels, and either an interfacial capacitor or a RC transfer circuit at the pore's wall. The resulting relaxation functions are classified in terms of two characteristic frequencies: one for coupled transport and interfacial polarization and another one for the interfacial reaction. Subsequently, these models are extended in order to describe porous electrodes where the interfacial polarization displays complex properties, i.e., frequency dispersion. The capacitive element is described by a constant-phase element (CPE), and it is shown that the fractionary exponent provides an additional and measurable degree of freedom in the parameter space of the relaxation function, whose determination can be exploited as a supplementary tool for analysis. The analysis of impedance measurements of TiO 2 nanoporous photoelectrodes in negative bias voltage shows that the suggested approach is capable of identifying two characteristic relaxation frequencies in a frequency-resolved measurement on this system.

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Hopping transport on a fractal: ac conductivity of porous silicon

Cited by 182 publications

References 42 publications

Universality of AC conductivity: Random site-energy model with Fermi statistics

Universality of AC conductivity: Random site-energy model with Fermi statistics

Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

Doubling Exponent Models for the Analysis of Porous Film Electrodes by Impedance. Relaxation of TiO₂ Nanoporous in Aqueous Solution

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Hopping transport on a fractal: ac conductivity of porous silicon

Cited by 182 publications

References 42 publications

Universality of AC conductivity: Random site-energy model with Fermi statistics

Universality of AC conductivity: Random site-energy model with Fermi statistics

Photocarrier drift-mobility measurements and electron localization in nanoporous silicon

Doubling Exponent Models for the Analysis of Porous Film Electrodes by Impedance. Relaxation of TiO2 Nanoporous in Aqueous Solution

Contact Info

Product

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Doubling Exponent Models for the Analysis of Porous Film Electrodes by Impedance. Relaxation of TiO₂ Nanoporous in Aqueous Solution