Pixels in complementary metal-oxide-semiconductor (CMOS) image sensors (CISs) are being scaled downward toward 1.0 lm. In this context, improvements in crucial parameters such as dark current per pixel, which suffers from defects incorporated during processing, need to be achieved. Indeed, accidental metallic contamination is a critical issue that induces dark current and reduces yield. In this paper, detection and characterization of gold and tungsten implanted in CISs using dark-current and deep-level transient spectroscopies are reported. Deep levels responsible for dark current are identified, and tungsten is studied for the first time with dark current spectroscopy.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.