Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

Domengie, Florian; Régolini, J. L.; Bauza, D.

doi:10.1007/s11664-010-1212-6

Cited by 37 publications

(29 citation statements)

References 18 publications

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“…McGrath et al were the first to use DCS to study defect formation and reported that the metallic impurities contaminated CCDs [40]. Domengie et al used DCS to analyze the dark current spectrum of intentionally doped metallic impurities (Au and W) CMOS image sensor [45]. They observed substantially increased dark current spectrum intensity in metal contaminated CMOS image sensor compared with that of CMOS image sensor without intentional metal contamination.…”

Section: Methodsmentioning

confidence: 99%

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kurita

Kadono

Shigematsu

et al. 2019

Sensors

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We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

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Section: Methodsmentioning

confidence: 99%

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kurita

Kadono

Shigematsu

et al. 2019

Sensors

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“…(43) Domengie et al demonstrated the effects of DCS signals in a CMOS image sensor intentionally contaminated with metallic impurities (W and Au) and used DLTS to evaluate them. (46) They found that the DCS signal has three peaks. They measured W-and Au-related deep-level defects in the space charge region using DLTS.…”

Section: Gettering Capability Of Hydrocarbon-molecular-ion-implanted mentioning

confidence: 99%

A Review of Proximity Gettering Technology for CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation

Kurita¹,

Kadono²,

Okuyama³

et al. 2019

Sensors and Materials

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We developed a high-gettering-capability silicon wafer for advanced CMOS image sensors using hydrocarbon molecular ion implantation. We found that this novel silicon wafer has an extremely high gettering capability for metal, oxygen, and hydrogen impurities during the CMOS device fabrication process. We also found that the white spot defect density of a hydrocarbon-molecular-ion-implanted CMOS image sensor was substantially lower than that of a CMOS image sensor without hydrocarbon molecular ion implantation. This indicates that the novel silicon wafer helped improve device performance parameters such as white spot defect density and dark current. We believe that this wafer will be beneficial in the design of silicon wafers for advanced CMOS image sensor fabrication.

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“…Improvements in critical device performance parameters, such as dark current per pixel, which suffers from defects and accidental metallic contamination during processing, are required for manufacturing high performance CISs. 5 As a device failure analysis technique, the detection and characterization of deep-levels in CISs using dark-current and deep-level transient spectroscopies, have employed gold and tungsten implanted in the CISs to identify the deep-levels responsible for the increase in dark current. 5 More practical contamination characterization techniques, which can be implemented on the manufacturing floor, must be developed.…”

confidence: 99%

Monitoring metal contamination of silicon by multiwavelength room temperature photoluminescence spectroscopy

2012

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Thin thermal oxide film (∼36 nm) was grown on p--Si (100) wafers in a vertical furnace at 950 °C for 90 min in 1 atm dry O2 as a vehicle for monitoring metal contamination. They are annealed in separate vertical furnaces at 1100°C for 120 min in N2 and tested for metal contamination using multiwavelength room temperature photoluminescence (RTPL), inductively coupled plasma mass spectroscopy (ICP-MS) and secondary ion mass spectroscopy (SIMS). Significant RTPL intensity and spectral variations, corresponding to the degree of metal contamination, were observed. Nondestructive wafer mapping and virtual depth profiling capabilities of RTPL is a very attractive metal contamination monitoring technique.

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Study of Metal Contamination in CMOS Image Sensors by Dark-Current and Deep-Level Transient Spectroscopies

Cited by 37 publications

References 18 publications

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

A Review of Proximity Gettering Technology for CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation

Monitoring metal contamination of silicon by multiwavelength room temperature photoluminescence spectroscopy

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