Based on the experimentally measured dispersion of refractive indices, we studied the effects of halide anions on the dielectric response of potassium halide solutions in the visible, UV and far UV regions. It was shown that a specific ion effect according to the Hofmeister series is clearly demonstrated for the visible range of spectra. For the near-, mid-, and far UV ranges of spectra, the specific ion effect essentially depends on solution concentration and temperature. The influence of ions on the behavior of dynamic dielectric permittivity of a solution is discussed on the basis of ion/water and ion/ion electrostatic and electrodynamic interactions and hydration shell structure.
The continuous scaling of semiconductor-based technologies to micron and sub-micron regimes has resulted in higher device density and lower power dissipation. Many physical phenomena such as self-heating or current leakage become significant at such scales, and mapping current densities to reveal these features is decisive for the development of modern electronics. However, advanced non-invasive technologies either offer low sensitivity or poor spatial resolution and are limited to two-dimensional spatial mapping. Here we use shallow nitrogen-vacancy centres in diamond to probe Oersted fields created by current flowing within a multi-layered integrated circuit in predevelopment. We show the reconstruction of the three-dimensional components of the current density with a magnitude down to ≈ 10 µA/µm 2 and sub-micron spatial resolution capabilities at room temperature. We also report the localisation of currents in different layers and observe anomalous current flow in an electronic chip. Further improvements using decoupling sequences and material optimisation will lead to nA-current detection at sub-micron spatial resolution. Our method provides therefore a decisive breakthrough towards three-dimensional current mapping in technologically relevant nanoscale electronics chips.
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