A new method for the measurement of thermal conductivity of electrically conducting single nanowires is presented. First experimental investigations are focused on the thermal conductivity of metallic Pt nanowires with a diameter of (typically) 100 nm and a length of 10 microm. Thermal conductivity data are compared with measurements of electrical conductivity in order to test the Wiedemann-Franz law for metallic nanowires. Compared to the bulk values at room temperature, electrical and thermal conductivities of the nanowire are decreased by a factor of 2.5 and 3.4, respectively. Consequently, the Lorenz number L = lambda/sigmaT = 1.82 x 10(-8) V(2) K(-2) of the nanowire is smaller than the bulk Lorenz number L(bulk) = (pi(2)/3)(k/e)(2) = 2.44 x 10(-8) V(2) K(-2) of metals. Furthermore, the temperature coefficient beta of electrical resistivity is also reduced compared to the bulk value. These decreases of lambda, sigma and beta can be attributed to size effects, mainly caused by grain boundary scattering of electrons.
This paper introduces a new methodology for the fabrication of strain-sensor elements for MEMS and NEMS applications based on the tunneling effect in nano-granular metals. The strain-sensor elements are prepared by the maskless lithography technique of focused electron-beam-induced deposition (FEBID) employing the precursor trimethylmethylcyclopentadienyl platinum [MeCpPt(Me)3]. We use a cantilever-based deflection technique to determine the sensitivity (gauge factor) of the sensor element. We find that its sensitivity depends on the electrical conductivity and can be continuously tuned, either by the thickness of the deposit or by electron-beam irradiation leading to a distinct maximum in the sensitivity. This maximum finds a theoretical rationale in recent advances in the understanding of electronic charge transport in nano-granular metals.
The characterization of nanostructured samples with at least one restricted dimension like thin films or nanowires is challenging, but important to understand their structure and transport mechanism, and to improve current industrial products and production processes. We report on the 2nd generation of a measurement chip, which allows for a simplified sample preparation process, and the measurement of samples deposited from the liquid phase using techniques like spin coating and drop casting. The new design enables us to apply much higher temperature gradients for the Seebeck coefficient measurement in a shorter time, without influencing the sample holder's temperature distribution. Furthermore, a two membrane correction method for the 3ω thermal conductivity measurement will be presented, which takes the heat loss due to radiation into account and increases the accuracy of the measurement results significantly. Errors caused by different sample compositions, varying sample geometries, and different heat profiles are avoided with the presented measurement method. As a showcase study displaying the validity and accuracy of our platform, we present temperature-dependent measurements of the thermoelectric properties of an 84 nm BiSb thin film and a 15 μm PEDOT:PSS thin film.
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