2010
DOI: 10.3390/s101109847
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A Tunable Strain Sensor Using Nanogranular Metals

Abstract: This paper introduces a new methodology for the fabrication of strain-sensor elements for MEMS and NEMS applications based on the tunneling effect in nano-granular metals. The strain-sensor elements are prepared by the maskless lithography technique of focused electron-beam-induced deposition (FEBID) employing the precursor trimethylmethylcyclopentadienyl platinum [MeCpPt(Me)3]. We use a cantilever-based deflection technique to determine the sensitivity (gauge factor) of the sensor element. We find that its se… Show more

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Cited by 107 publications
(107 citation statements)
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“…These metal-carbon combinations have constant gauge factors around 10 up to the percolation limit at about 70 at. %, comparable to Schwalb et al (2010). The gauge factor of the carbon matrix is essentially maintained until gradually more and more conduction paths percolate.…”
Section: Metal Concentration Series For Different Metal-carbon Combinmentioning
confidence: 71%
“…These metal-carbon combinations have constant gauge factors around 10 up to the percolation limit at about 70 at. %, comparable to Schwalb et al (2010). The gauge factor of the carbon matrix is essentially maintained until gradually more and more conduction paths percolate.…”
Section: Metal Concentration Series For Different Metal-carbon Combinmentioning
confidence: 71%
“…This flexibility of the FEBID technique, merged with an enormous downscaling potential [3,4], opens new pathways for various applications such as the development of nano-sensors for magnetic [5,6], strain/ force [1,7], dielectric [8,9] sensing or the possibility to fabricate metallic contact structures with sub-10nm lateral resolution [10]. However, in many cases post-treatment of the as-grown FEBID deposit is inevitable in order to meet the demands for specific applications.…”
Section: Introductionmentioning
confidence: 99%
“…105 and 106. Selected publications pertaining to gas-assisted processing techniques are reported in Table II. In general, beam induced deposition (historically electron and Ga þ ) is capable of highly controlled nanoscale direct-write fabrication and is thus an important technique to consider for various applications including but not limited to rapid prototyping, 107 sensor development, 108 and nanoplasmonics. 109 Ga þ ion beam induced deposits have the disadvantage of gallium staining 110 as well as having limited spatial resolution due to the larger beam size.…”
Section: Gas-assisted Processingmentioning
confidence: 99%