The electrical properties of deformed n‐ and p‐type germanium can be related to the presence of dislocations and of point defects exhausting the primary doping elements by association reactions. The distribution of the associates should be inhomogeneous, with higher concentrations around the dislocations. The energy levels of the main associates should lie at 0.10 eV above the valence band.
A prevalence of either screw or edge dislocations may be obtained with deformations by bending below or above ≈500 °C, respectively, after introduction of high densities of dislocation surces.
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