Bilateral microscopy of dislocations and dislocation diodes in germanium

Calzecchi, F.; Gondi, P.; Schintu, F.

doi:10.1007/bf02711811

Cited by 16 publications

(13 citation statements)

References 4 publications

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“…There are some early investigations which showed only the diode character of an individual edge dislocation running through a whole wafer. [10][11][12] Recent studies have drawn a more detailed picture indicating that dislocations possess some exceptional electronic and optical properties induced by their small dimensions. [13][14][15] Possible applications of dislocations as active components of semiconductor devices have been discussed.…”

Section: Introductionmentioning

confidence: 99%

On the electronic properties of a single dislocation

Reiche

Kittler

Erfurth

et al. 2014

Journal of Applied Physics

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A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record electric properties of single dislocations in thin silicon layers. Results of measurements on single screw dislocations are shown for the first time. Assuming a cross-section area of the dislocation core of about 1 nm 2 , the current density through a single dislocation is J ¼ 3.8 Â 10 12 A/cm 2 corresponding to a resistivity of q ffi 1 Â 10 À8 X cm. This is about eight orders of magnitude lower than the surrounding silicon matrix. The reason of the supermetallic behavior is the high strain in the cores of the dissociated dislocations modifying the local band structure resulting in high conductive carrier channels along defect cores.

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Section: Introductionmentioning

confidence: 99%

On the electronic properties of a single dislocation

Reiche

Kittler

Erfurth

et al. 2014

Journal of Applied Physics

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“…However, the idea of exploiting the unique properties of dislocations has existed for 40–50 years, almost from the time of their detection in semiconductors. From possible applications of the “self‐organized” diode behavior of dislocations in Ge1 and Si2, 3 in the 1970s and the suggested use of dislocations as buried microwires in Si4 in the 1980s to the recently proposed possible applications as a base for light emitters,5 dislocations have always been at the centre of the attention of semiconductor specialists.…”

Section: Introductionmentioning

confidence: 99%

Regular Dislocation Networks in Silicon as a Tool for Nanostructure Devices used in Optics, Biology, and Electronics

Kittler

Mchedlidze

et al. 2007

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Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.

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“…First attributed to "detrimental" defects, dislocations were soon recognized as promising candidates for several device applications [1], ranging from the "self-organized" diodes in Ge [2] and Si [3,4] and buried microwires [5] to a base for allsilicon light emitters [6]. Complexity of the investigations was related to large variety of dislocation structures and to strong interaction of dislocations with impurities and other defects [1].…”

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Correlation of electrical and luminescence properties of a dislocation network with its microscopic structure

Mchedlidze

Wilhelm

Arguirov

et al. 2009

Phys. Status Solidi (c)

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The direct bonding of Si wafers reproducibly forms dislocation networks (DN) with a microscopic structure defined by the mutual crystallographic orientation between the pair of wafers used for the bonding procedure. This allows studying the electrical and optical properties of specific dislocations. In the present work three different DN structures were investigated using transmission electron microscopy (TEM), photoluminescence (PL) and deep level transient spectroscopy (DLTS). The results show close correlation between the structural, electrical and optical properties of dislocations and opens a possibility to identify structural peculiarities of the dislocations responsible for the high intensity of photoluminescence. Namely, the obtained results suggest that PL at ∼0.8 eV is related to screw dislocations in DN. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Bilateral microscopy of dislocations and dislocation diodes in germanium

Cited by 16 publications

References 4 publications

On the electronic properties of a single dislocation

On the electronic properties of a single dislocation

Regular Dislocation Networks in Silicon as a Tool for Nanostructure Devices used in Optics, Biology, and Electronics

Correlation of electrical and luminescence properties of a dislocation network with its microscopic structure

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