Point defect associates and inhomogeneity effects in deformed germanium

Gondi, P.; Mantovani, S.; Schintu, F.

doi:10.1002/pssa.2210070109

Cited by 11 publications

(1 citation statement)

References 26 publications

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“…x lola cm-9; p-type after deformation and treatments; just after deformation at 350 'C ( 0 ) and heated at 480 'C for 30 mins (1) and 120 mins (2). Broken lines are calculated for quantities given in Table 1 Even though point defects, or point defect associates may have to be taken into account (GONDI et al 1971), we consider here at first, the possibility of an explanation in terms of dislocations. The interpretation is based on the assumption that, as a consequence of the thermal treatments, part of the energy levels that determine the behaviour just after deformation, is rendered ineffective.…”

Section: Energy Levels Of Dislocations In Ge Under Different Conditiomentioning

confidence: 99%

Energy levels of dislocations in Ge under different conditions. Comparison between images of electron‐ and light‐beam scanning microscopy

Castaldini

Cavallini

Gondi

1981

Cryst Res and Technol

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Thermal treatment effects on Ge deformed at 350°C are consistent with reductions of the effective dangling bond densities on the dislocations. On account of difficulties in the application of known statistics the phenomena observed are briefly discussed by considering a heavily doped cylinder model for the dislocations. Observations with infrared beam induced currents emphasize the necessity of considering the effects of other defects, introduced together with dislocations during deformation, in particular for the interpretation of photoconductivity data.

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Section: Energy Levels Of Dislocations In Ge Under Different Conditiomentioning

confidence: 99%

Energy levels of dislocations in Ge under different conditions. Comparison between images of electron‐ and light‐beam scanning microscopy

Castaldini

Cavallini

Gondi

1981

Cryst Res and Technol

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On the electronic states at dislocations in germanium

Labusch

Schettler

1972

Phys. Stat. Sol. (a)

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Dislocation states in germanium are investigated in a series of deformed specimens with doping concentrations between 1012 acceptors and 1015 donors per cm3. The Fermi energy, EF, and the occupation ratio, f, of the dislocation levels are determined from Hall effect measurements. Possible errors of f are carefully discussed. From this discussion experimental conditions are obtained under which a reliable comparison of the results with theoretical models is possible. For p‐type as well as for n‐type material the results are found to be in quantitative agreement with the model of a partly filled dislocation band. An explanation is given for the discrepancies between previous results of different authors.

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Shallow dislocation states in Ge. Thermal treatment effects

Cavallini

Gondi

Castaldini

1981

Phys. Stat. Sol. (a)

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The effects of thermal treatments on the carrier density of Ge deformed at relatively low temperature are examined. The results are explained by considering a progressive inactivation of shallow states at ≈ 0.02 eV from the valence band, probably connected with the strain field around the dislocations, and by referring the behaviour after prolonged heating to dislocation states at 0.05 to 0.06 eV, probably due to impurity diffusion along the dislocations themselves. Indication is found that other acceptor centres are introduced in bulk Ge together with the dislocations, during deformation and thermal treatments.

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Point defect associates and inhomogeneity effects in deformed germanium

Cited by 11 publications

References 26 publications

Energy levels of dislocations in Ge under different conditions. Comparison between images of electron‐ and light‐beam scanning microscopy

Energy levels of dislocations in Ge under different conditions. Comparison between images of electron‐ and light‐beam scanning microscopy

On the electronic states at dislocations in germanium

Shallow dislocation states in Ge. Thermal treatment effects

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