Energy levels of dislocations in Ge under different conditions. Comparison between images of electron‐ and light‐beam scanning microscopy

Abstract

Thermal treatment effects on Ge deformed at 350°C are consistent with reductions of the effective dangling bond densities on the dislocations. On account of difficulties in the application of known statistics the phenomena observed are briefly discussed by considering a heavily doped cylinder model for the dislocations. Observations with infrared beam induced currents emphasize the necessity of considering the effects of other defects, introduced together with dislocations during deformation, in particular for the interpretation of photoconductivity data.

Generation and Recombination Images of Dislocations in Si by Scanning Microscopy

“…With larger deformations the photocurrents become instead smaller because recombination prevails, most probably owing to point defect associates, etc., introduced in the bulk together with the dislocations during deformation. Results of IRBIC observations on deformed Ge lead to the same conclusion [3].…”