Abstract:I n high purity Si generation images of dislocations, appearing as white lines, may be obtained in scanning microscopy by using an IR beam with suitable wavelength, with excitations involving prevalently the dislocation energy levels. Different contrasts are observed with broad area contacts or with point contacts localized in the dislocation etch-pit centre.Dans Silicium de haute puretb on a obtenu des images de dislocations comme des lignes blanches par le moyen d'un microscope 8. balayage. On a utilisb un f… Show more
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