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We identified a family of materials which can be directly electroplated with Cu in acidic plating baths commonly found in the microelectronics industry. Details are presented illustrating a number of important properties of the electroplated Cu/linear material system. These include the adhesion of the plated film to liner material, the recrystallization behavior of the plated film, the texture of the plated film, and the resistivity of the plated film after high-temperature anneals. Finally, an example is presented illustrating the direct plating of Cu across an 8 in. wafer without the use of a Cu seed layer.

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When epitaxial graphene layers are formed on SiC͑0001͒, the first carbon layer ͑known as the "buffer layer"͒, while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disruption of the graphene bands by covalent bonding to the SiC substrate. Here we show that it is possible to restore the graphene bands by inserting a thin oxide layer between the buffer layer and SiC substrate using a low temperature, complementary metal-oxide semiconductor-compatible process that does not damage the graphene layer.

By comparing the C 1s photoemission intensities from a clean diamond {111} surface to those obtained from a fluorine-covered surface, we conclude that a single t, '111) layer of atoms participates in the diamond 2X 1 surface reconstruction. The data interpretation presented does not rely on assuming an electron mean free path, but, in fact provides an independent measurement of its value. For clean diamond (111) a surface core-level peak is observed at 0.80+0.05 eV lower binding energy than the bulk-C 1s peak at 285.0 eV below E~. After fluorine exposure a single chemically shifted carbon peak is observed at 1.85+0.05 eV higher binding energy than the bulk peak, indicating the presence of CF units at the surface.