Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general formed of component elements that are well matched in terms of ionicity, atom size and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN 1-x As x a highly mismatched, immiscible alloy system that was successfuly synthesized in the whole composition range using a non-equilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.170.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offers an opportunity of using GaN 1-x As x alloys for various types of solar power conversion devices. 3 1. The Ga-N-As Alloy system Dilute alloysSemiconductor alloys formed through substitution of atoms with very different electronegativity and/or size have been known as highly mismatched alloys (HMAs).Because of large miscibility gaps, typically HMAs consist of a semiconductor matrix (elemental or compound) with the substitution of a small amount (up to several percents) of distinctly different isovalent atoms. The HMAs show large band gap reduction and their electronic structure is drastically different from their host materials. This is in contrast to conventional semiconductor alloys such as AlGaAs and GaAsP whose physical, electronic and optical properties can be deduced from a linear interpolation between their corresponding end point compounds with only a slight deviation, as predicted by the virtual crystal approximation (VCA). A most notable example of HMAs is the As-rich GaN x As 1-x in which strong band gap reduction by as much as 180 meV per mole percent of N has been observed [1,2,3,4]. The strong dependence of the band gap on the N content has made these diluted III-V nitrides important materials for a variety of applications, including long wavelength optoelectronic devices [5,6] and high efficiency hybrid solar cells [7,8].In contrast to the very extensively studied As-rich GaNAs alloys much less work has been devoted to HMAs on the N-rich side of this alloy system. It was found that GaN doped with As at low, impurity like levels shows a characteristic blue emission at room temperature. At higher As doping levels an abrupt decrease in the band gap of...

Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra

High-quality CuInSe2 single crystals were studied using polarization resolved photoluminescence (PL) and magnetophotoluminescence (MPL). The emission lines related to the first (n=2) excited states for the A and B free excitons were observed in the PL and MPL spectra at 1.0481 meV and 1.0516 meV, respectively. The spectral positions of these lines were used to estimate accurate values for the A and B exciton binding energies (8.5 meV and 8.4 meV, respectively), Bohr radii (7.5 nm), band gaps (E-g(A)=1.050 eV and E-g(B)=1.054 eV), and the static dielectric constant (11.3) assuming the hydrogenic model

Excitonic recombination processes in high quality CuInSe2 single crystals have been studied by photoluminescence (PL) and reflectance spectroscopy as a function of excitation powers and temperature. Excitation power dependent measurements confirm the identification of well-resolved A and B free excitons in the PL spectra and analysis of the temperature quenching of these lines provides values for activation energies. These are found to vary from sample to sample, with values of 12.5 and 18.4meV for the A and B excitons, respectively, in the one showing the highest quality spectra. Analysis of the temperature and power dependent PL spectra from the bound excitonic lines, labelled M1, M2, and M3 appearing in multiplets points to a likely assignment of the hole involved in each case. The M1 excitons appear to involve a conduction band electron and a hole from the B valence band hole. In contrast, an A valence band hole appears to be involved for the M2 and M3 excitons. In addition, the M1 exciton multiplet seems to be due to the radiative recombination of excitons bound to shallow hydrogenic defects, whereas the excitons involved in M2 and M3 are bound to more complex defects. In contrast to the M1 exciton multiplet, the excitonic lines of M2 and M3 saturate at high excitation powers suggesting that the concentration of the defects involved is low. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709448

We present an InAs/GaAs quantum dot ͑QD͒ memory structure with all-electrical data access which uses holes as charge carriers. Charging and discharging of the QDs are clearly controlled by a gate voltage. The stored information is read-out by a two-dimensional hole gas underneath the QD-layer. Time resolved drain-current-measurements demonstrate the memory operation. Present write times are 80 ns.

The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement J. Appl. Phys. 113, 033704 (2013) Electron effective mass in n-type electron-induced ferromagnetic semiconductor (In,Fe)As: Evidence of conduction band transport Appl. Phys. Lett. 101, 252410 (2012) Two-site Hubbard molecule with a spinless electron-positron pair J. Appl. Phys. 112, 123706 (2012) Electronic band structure and effective mass parameters of Ge1-xSnx alloys J. Appl. Phys. 112, 103715 (2012) First-principles study on the effective masses of zinc-blend-derived Cu2Zn−IV−VI4 (IV=Sn, Ge, Si and VI=S, Se)

Using cross-sectional scanning tunneling microscopy and photoluminescence spectroscopy, the atomic structure and optical properties of submonolayer depositions of InAs in GaAs are studied. The submonolayer depositions are formed by a cycled deposition of 0.5 monolayers InAs with GaAs spacer layers of different thicknesses between 1.5 and 32 monolayers. The microscopy images exhibit InAs-rich agglomerations with widths around 5 nm and heights of up to 8 monolayers. A lateral agglomeration density in the 1012cm -2 range is found. During the capping of the InAs depositions a vertical segregation occurs, for which a segregation coefficient of 0.73 was determined. In the case of thin GaAs spacer layers, the observed segregation forms vertically connected agglomerations. The photoluminescence spectra exhibit peaks with linewidths below 10 meV and show a considerable dependence of the peak energy on the spacer thickness, even up to 32 monolayers GaAs, indicating a long range e lectronic coupling

Single crystals of CuGaSe 2 were studied using magnetophotoluminescence in magnetic fields up to 20 T at 4.2 K. The rate of the diamagnetic shift in the A free exciton peak was determined to be 9.82ϫ 10 −6 eV/ T 2 . This rate was used to calculate the reduced mass as 0.115m 0 , the binding energy as 12.9 meV, the Bohr radius as 5.1 nm and an effective hole mass of 0.64m 0 ͑m 0 is the free electron mass͒ of the free A exciton using a low-field perturbation approach and the hydrogenic model.