Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general formed of component elements that are well matched in terms of ionicity, atom size and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN 1-x As x a highly mismatched, immiscible alloy system that was successfuly synthesized in the whole composition range using a non-equilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.170.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offers an opportunity of using GaN 1-x As x alloys for various types of solar power conversion devices. 3 1. The Ga-N-As Alloy system Dilute alloysSemiconductor alloys formed through substitution of atoms with very different electronegativity and/or size have been known as highly mismatched alloys (HMAs).Because of large miscibility gaps, typically HMAs consist of a semiconductor matrix (elemental or compound) with the substitution of a small amount (up to several percents) of distinctly different isovalent atoms. The HMAs show large band gap reduction and their electronic structure is drastically different from their host materials. This is in contrast to conventional semiconductor alloys such as AlGaAs and GaAsP whose physical, electronic and optical properties can be deduced from a linear interpolation between their corresponding end point compounds with only a slight deviation, as predicted by the virtual crystal approximation (VCA). A most notable example of HMAs is the As-rich GaN x As 1-x in which strong band gap reduction by as much as 180 meV per mole percent of N has been observed [1,2,3,4]. The strong dependence of the band gap on the N content has made these diluted III-V nitrides important materials for a variety of applications, including long wavelength optoelectronic devices [5,6] and high efficiency hybrid solar cells [7,8].In contrast to the very extensively studied As-rich GaNAs alloys much less work has been devoted to HMAs on the N-rich side of this alloy system. It was found that GaN doped with As at low, impurity like levels shows a characteristic blue emission at room temperature. At higher As doping levels an abrupt decrease in the band gap of...

We report a band gap bowing parameter for In1−xAlxN of 4.7 eV from a study of high quality and homogenous samples with x=0.017–0.60. Optical absorption data were modeled to extract the band gaps in order to consider the complications of the band structure of In-rich InAlN, including the Burstein–Moss shift, nonparabolic conduction band, and broadening of the absorption edge. The alloy compositions were accurately determined using Rutherford backscattering spectrometry and the sample quality was evaluated using x-ray diffraction and channeling-RBS.