Band gap bowing parameter of In1−xAlxN

Applied Physics Letters

Nakano

2012

An ab-initio study of electronic and optical properties of corundum Al2O3 doped with Sc, Y, Zr, and Nb J. Appl. Phys. 112, 093709 (2012) Evidence of Eu2+ 4f electrons in the valence band spectra of EuTiO3 and EuZrO3 J. Appl. Phys. 112, 083719 (2012) Model GW study of the late transition metal monoxides J. Chem. Phys. 137, 154110 (2012) First-principles study of electronic structure and magnetic properties of Cu-doped CeO2 J. Appl. Phys. 112, 083702 (2012) Electronic structure and optical band gap of CoFe2O4 thin films

mentioning

confidence: 78%

Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition

Applied Physics Letters

Nakano

2012

“…Here, the E g of InAlN is larger than that of GaN in the range of the molar fraction of the prepared samples. 11,12 The band alignment is therefore type II when ⌬E V Ͻ 0. This method can, however, be applied to a sample in a nearly flat-band situation, with negligible band bending, at the surface to depths of around 10 nm.…”

Section: ⌬Ementioning

confidence: 99%

“…2,3,5,10 If we expand the scope to include nonlattice-matched InAlN/GaN heterostructures, the band gap, E g , of InAlN can be greatly changed from 6.2 eV ͑AlN͒ to 0.67 eV ͑InN͒. 11 It has theoretically been predicted that the decrease in the conduction band offset, ⌬E C , according to the increase in the In molar fraction is much larger than decrease in the valence band offset, ⌬E V . 12 This interface property is useful for barrier-height engineering.…”

Section: Introductionmentioning

confidence: 99%

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Journal of Applied Physics

Gao

Hashizume

et al. 2011

The valence band offsets, ⌬E V , of In 0.17 Al 0.83 N / GaN, In 0.25 Al 0.75 N / GaN, and In 0.30 Al 0.70 N / GaN heterostructures grown by metal-organic vapor phase epitaxy were evaluated by using x-ray photoelectron spectroscopy ͑XPS͒. The dependence of the energy position and the full width at half maximum of the Al 2p spectrum on the exit angle indicated that there was sharp band bending caused by the polarization-induced electric field combined with surface Fermi-level pinning in each ultrathin InAlN layer. The ⌬E V values evaluated without taking into account band bending indicated large discrepancies from the theoretical estimates for all samples. Erroneous results due to band bending were corrected by applying numerical calculations, which led to acceptable results. The evaluated ⌬E V values were 0.2Ϯ 0.2 eV for In 0.17 Al 0.83 N / GaN, 0.1Ϯ 0.2 eV for In 0.25 Al 0.75 N / GaN, and 0.0Ϯ 0.2 eV for In 0.30 Al 0.70 N / GaN. Despite the large decrease of around 1.0 eV in the band gap of InAlN layers according to the increase in the In molar fraction, the decrease in ⌬E V was as small as 0.2 eV. Therefore, the change in band-gap discontinuity was mainly distributed to that in conduction band offset.

“…To clarify this relation, band alignment among Al 2 O 3 , InAlN, and GaN is schematically illustrated with E CNL in Fig. 5 using reported bandgap values [9][10][11] and our measurement results for DE V at the Al 2 O 3 /InAlN and InAlN/GaN interfaces. 8,12 The E CNL position is also indicated in Fig.…”

Section: -2mentioning

confidence: 99%

Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN

Applied Physics Letters

Chiba

Nakano

2013

The Al2O3/InAlN interface formed by atomic layer deposition on a sufficiently thick silicon-doped InAlN layer lattice matched to GaN was investigated electrically. A metal-oxide-semiconductor (MOS) diode fabricated through careful interface formation showed a minimized leakage current and a capacitance-voltage (C-V) characteristic with a capacitance change large enough to evaluate the interface-state density, in the range of 10(12) eV(-1) cm(-2), near the conduction band. However, the MOS diode with careless interface formation resulted in degraded electrical characteristics, which indicated the process dependence of the interface properties. The effects of the acceptor-like interface states on the C-V curves are discussed. (C) 2013 AIP Publishing LLC