The Al2O3/InAlN interface formed by atomic layer deposition on a sufficiently thick silicon-doped InAlN layer lattice matched to GaN was investigated electrically. A metal-oxide-semiconductor (MOS) diode fabricated through careful interface formation showed a minimized leakage current and a capacitance-voltage (C-V) characteristic with a capacitance change large enough to evaluate the interface-state density, in the range of 10(12) eV(-1) cm(-2), near the conduction band. However, the MOS diode with careless interface formation resulted in degraded electrical characteristics, which indicated the process dependence of the interface properties. The effects of the acceptor-like interface states on the C-V curves are discussed. (C) 2013 AIP Publishing LLC
An attempt was made to control the Al2O3/InAlN interface by the phase change of the Al2O3 layer formed by atomic layer deposition (ALD). The electrical properties of an InAlN metal–oxide–semiconductor (MOS) diode with a sufficiently thick ALD-Al2O3 layer deteriorated following conventional postdeposition annealing (PDA) at 850 °C, which is sufficiently high for microcrystallization of the ALD-Al2O3 layer. However, X-ray photoelectron spectroscopy showed no evidence of an interface disorder in the ultrathin ALD-Al2O3/InAlN structure annealed at 850 °C. Two-step ALD interrupted by annealing at 850 °C right after the formation of the initial ultrathin Al2O3 layer improved the electrical properties of the MOS diode with reduced interface state density (D
it) and leakage current. A weak crystallization of the ultrathin Al2O3 layer was confirmed by transmission electron microscopy. Improvement of the interface disorder by high-temperature annealing is discussed as the origin of the D
it reduction.
Effects of high-temperature annealing on the properties of the Al 2 O 3 /InAlN interface formed by atomic layer deposition (ALD) are investigated. Post deposition annealing at 850 o C deteriorated the electrical property of the InAlN metal-oxide-semiconductor diode with an 18 nm-thick ALD-Al 2 O 3 layer. However, the Al 2 O 3 / InAlN interface property was improved by two-step ALD interrupted by annealing at 850 o C right after the initial 2 nm-thick Al 2 O 3 layer formation.
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