The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements. At liquid helium temperature in undoped crystals the neutral donor bound excitons dominate in the PL spectrum. Two electron satellite transitions (TES) of the donor bound excitons allow to determine the donor binding energies ranging from 46 to 73 meV. These results are in line with the temperature dependent Hall effect measurements. In the as-grown crystals a shallow donor with an activation energy of 30 meV controls the conductivity. Annealing annihilates this shallow donor which has a bound exciton recombination at 3.3628 eV. Correlated by magnetic resonance experiments we attribute this particular donor to hydrogen. The Al, Ga and In donor bound exciton recombinations are identified based on doping and diffusion experiments and using secondary ion mass spectroscopy. We give a special focus on the recombination around 3.333 eV, i.e. about 50 meV below the free exciton transition. From temperature dependent measurements one obtains a small thermal activation energy for the quenching of the luminescence of 10 ± 2 meV despite the large localization energy of 50 meV. Spatially resolved CL measurements show that the 3.333 eV lines are particularly strong at crystal irregularities and occur only at certain spots hence are not homogeneously distributed within the crystal contrary to the bound exciton recombinations. We attribute them to excitons bound to structural defects (Y-line defect) very common in II-VI semiconductors. For the bound exciton lines which seem to be correlated with Li and Na doping we offer a different interpretation. Li and Na do not introduce any shallow acceptor level in ZnO which otherwise should show up in donor -acceptor pair recombinations. Nitrogen creates a shallow acceptor level in ZnO. Donor -acceptor pair recombination with the 165 meV deep N-acceptor is found in nitrogen doped and implanted ZnO samples, respectively. In the best undoped samples excited rotational states of the donor bound excitons can be seen in low temperature PL measurements. At higher temperatures we also see the appearance of the excitons bound to the B-valence band, which are approximately 4.7 meV higher in energy.

CdSe is used as a prototype to show the implications of valence-band degeneracy for the optical properties of strongly quantum-confined nanocrystals. Absorption spectra and photoluminescence spectra obtained under intermediate and strong pulsed excitation show the presence of new structures. The energy levels for the electron and the hole are calculated with the spherical confinement, the nonparabolicity of the conduction band, and the valence band degeneracy taken into account. The oscillator strengths of the dipole-allowed transitions are also calculated. This model is found to be in good agreement with the experimental observations, which originate mainly from the quantization of the energy spectrum of holes with due account given to valence-band degeneracy.

Applications of semiconductor nanocrystals such as biomarkers and light-emitting optoelectronic devices require that their fluorescence quantum yield be close to 100%. However, such quantum yields have not been obtained yet, in part, because non-radiative Auger recombination in charged nanocrystals could not be suppressed completely. Here, we synthesize colloidal core/thick-shell CdSe/CdS nanocrystals with 100% quantum yield and completely quenched Auger processes at low temperatures, although the nanocrystals are negatively photocharged. Single particle and ensemble spectroscopy in the temperature range 30-300 K shows that the non-radiative Auger recombination is thermally activated around 200 K. Experimental results are well described by a model suggesting a temperature-dependent delocalization of one of the trion electrons from the CdSe core and enhanced Auger recombination at the abrupt CdS outer surface. These results point to a route for the design of core/shell structures with 100% quantum yield at room temperature.

We study the band-edge exciton fine structure and in particular its bright-dark splitting in colloidal semiconductor nanocrystals by four different optical methods based on fluorescence line narrowing and time-resolved measurements at various temperatures down to 2 K. We demonstrate that all these methods provide consistent splitting values and discuss their advances and limitations. Colloidal CdSe nanoplatelets with thicknesses of 3, 4 and 5 monolayers are chosen for experimental demonstrations. The bright-dark splitting of excitons varies from 3.2 to 6.0 meV and is inversely proportional to the nanoplatelet thickness. Good agreement between experimental and theoretically calculated size dependence of the bright-dark exciton slitting is achieved. The recombination rates of the bright and dark excitons and the bright to dark relaxation rate are measured by time-resolved techniques.

Time-resolved Faraday rotation is used to study both transverse and longitudinal spin relaxation in chemically-synthesized CdSe nanocrystals (NCs) 22-80Å in diameter. The precession of optically-injected spins in a transverse magnetic field occurs at distinct frequencies whose assignment to electron and exciton spins is developed through systematic studies of the size-dependence and theoretical calculations. It is shown that the transverse spin lifetime is limited by inhomogeneous dephasing to a degree that cannot be accounted for by the NC size distribution alone. Longitudinal spin relaxation in these NCs occurs on several distinct timescales ranging from 100ps-10µs and exhibits markedly different dependencies on temperature and field in comparison to transverse spin relaxation.

Using first-principles linear muffin-tin orbital density functional band structure calculations, the ordering of the states in the wurtzite ZnO valence-band maximum, split by crystal-field and spin-orbit coupling effects, is found to be ⌫ 7(5) Ͼ⌫ 9(5) Ͼ⌫ 7(1) , in which the number in parentheses indicates the parent state without spin-orbit coupling. This results from the negative spin-orbit splitting, which in turn is due to the participation of the Zn 3d band. The result is found to be robust even when effects beyond the local density approximation on the Zn 3d band position are included. Using a Kohn-Luttinger model parametrized by our first-principles calculations, it is furthermore shown that the binding energies of the excitons primarily derived from each valence band differ by less than the valence-band splittings even when interband coupling effects are included. The binding energies of nϭ2 and nϭ1 excitons, however, are not in a simple 1/4 ratio. Our results are shown to be in good agreement with the recent magneto-optical experimental data by Reynolds et al. ͓Phys. Rev. B 60, 2340, in spite of the fact that on the basis of these data these authors claimed that the valence-band maximum would have ⌫ 9 symmetry. The differences between our and Reynolds' analysis of the data are discussed and arise from the sign of the Landé g factor for holes, which is here found to be negative for the upper ⌫ 7 band.

ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to deeply bound excitons (Y lines). In this work, we present a comprehensive study of the properties of the deeply bound excitons with particular focus on the Y 0 transition at 3.333 eV. The electronic and optical properties of these centers are compared to those of the shallow impurity related exciton binding centers (I lines). In contrast to the shallow donors in ZnO, the deeply bound exciton complexes exhibit a large discrepancy between the thermal activation energy and localization energy of the excitons and cannot be described by an effective mass approach. The different properties between the shallow and deeply bound excitons are also reflected by an exceptionally small coupling of the deep centers to the lattice phonons and a small splitting between their two electron satellite transitions. Based on a multitude of different experimental results including magnetophotoluminescence, magnetoabsorption, excitation spectroscopy (PLE), time resolved photoluminescence (TRPL), and uniaxial pressure measurements, a qualitative defect model is developed which explains all Y lines as radiative recombinations of excitons bound to extended structural defect complexes. These defect complexes introduce additional donor states in ZnO. Furthermore, the spatially localized character of the defect centers is visualized in contrast to the homogeneous distribution of shallow impurity centers by monochromatic cathodoluminescence imaging. A possible relation between the defect bound excitons and the green luminescence band in ZnO is discussed. The optical properties of the defect transitions are compared to similar luminescence lines related to defect and dislocation bound excitons in other II-VI and III-V semiconductors.

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