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In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of the InP-based PIN diode and HFET on one InP-substrate. Using these two devices, we integrated three different MMIC designs on one wafer: SPDT switch, phaseshifter and a combination of SPDT switch and LNA for a multifunctional MMIC.

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