Metamorphic HFETs on GaAs with InP-subchannels for device performance improvements

Gassler, C.; Ziegler, Volker; Wolk, C.; Deufel, R.; Berlec, F.-J.; Kab, N.; Kohn, E.

doi:10.1109/iedm.2000.904288

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…So far, several approaches have been adopted to improve the breakdown voltage of the MHEMTs, such as increasing the aluminum content in the upper Schottky barrier layer [l] and optimizing the gate recess width [2]. The design of composite-channel, which was proposed by Enoki et a/ [3] and applied to InP-based heterostructure field effect transistor, has also been applied to MHEMTs [4].…”

Section: Introductionmentioning

confidence: 99%

High breakdown voltage In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic HEMT using In/sub x/Ga/sub 1-x/P graded buffer

Yuan

Radhakrishnan

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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Metamorphic Ino.5~Alo.4~As/Ino.~~Ga~.~~As HEMT grown on GaAs with In,Gal-,P (x=0.48-+ 1) graded buffer layer is reported. In this design the Ino.53Ga0.47As channel layer was grown on top of the InGaP graded buffer directly without an InAlAs buffer as in the conventional design. The device shows high breakdown voltage: the measured on-state and off-state breakdown voltage are 11 V and 23 V, respectively, at a gate current of 0.1 mA/mm. The impact ionization rate and its dependence on temperature is also measured and analyzed, and the possible mechanism of the high breakdown voltage achieved is discussed. The metamorphic HEMT shows promising performance for its potential in power applications.

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Section: Introductionmentioning

confidence: 99%

High breakdown voltage In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic HEMT using In/sub x/Ga/sub 1-x/P graded buffer

Yuan

Radhakrishnan

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics

Choi

Baek

et al. 2008

IEICE Transactions on Electronics

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Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT

Choi

Baek

et al. 2008

2008 Global Symposium on Millimeter Waves

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Metamorphic HFETs on GaAs with InP-subchannels for device performance improvements

Cited by 4 publications

References 6 publications

High breakdown voltage In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic HEMT using In/sub x/Ga/sub 1-x/P graded buffer

High breakdown voltage In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic HEMT using In/sub x/Ga/sub 1-x/P graded buffer

Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics

Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT

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