C. Wolk scite author profile

Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures J. Appl. Phys. 112, 053718 (2012) The inter-sublevel optical properties of a spherical quantum dot-quantum well with and without a donor impurity J. Appl. Phys. 112, 053717 (2012) Observation of a 0.5 conductance plateau in asymmetrically biased GaAs quantum point contact Appl. Phys. Lett. 101, 102401 (2012) Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires Appl.

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Quasi one-dimensional in-plane-gate field-effect-transistor

Meiners

Brugger

Maile

et al. 1994

Solid-State Electronics

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Metamorphic pin diodes for high isolating and low power consuming millimetre-wave switching MMICs

et al. 2000

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Recess dependent breakdown behavior of GaAs-HFETs

Geiger

Dickmann

Wolk

et al. 1995

IEEE Electron Device Lett.

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C. Wolk

Barrier height engineering on GaAs THz Schottky diodes by means of high-low doping, InGaAs- and InGaP-layers

Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero-field-effect transistor structures by photoluminescence

Quasi one-dimensional in-plane-gate field-effect-transistor

Metamorphic pin diodes for high isolating and low power consuming millimetre-wave switching MMICs

Recess dependent breakdown behavior of GaAs-HFETs

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