Barrier height engineering on GaAs THz Schottky diodes by means of high-low doping, InGaAs- and InGaP-layers

Microwave Detectors Based on Low-Barrier Planar Schottky Diodes and Their Characteristics

“…An obvious method for reducing the effective barrier height of a Schottky diode is to ensure high tunnel transparence near the top of the potential barrier in the case of strong inhomogeneous doping of a semiconductor near the contact with metal [3][4][5]. It is shown in [6,7] both theoretically (by numerical and analytical calculations) and experimentally that the use of the delta doping is prospective for lowbarrier diodes.…”

Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model

“…When the doping level in the silicon is low, the Schottky barrier acts as a diode that has a lower turn-on voltage than a p-n junction diode. With this advantage, the Schottky diode has been frequently used in high-speed devices such as those in GaAs [1], [2]. With an increased doping concentration at the interface, the Schottky diode becomes an ohmic contact with severe barrier lowering resulting from an increased tunneling current [3], [4].…”

“…Many experimental and theoretical studies of the current flow mechanism in Schottky barriers have been reported [1]- [10]. Crowell and Sze used Schottky's diffusion theory and Bethe's thermionic emission theory to evaluate the Schottky barrier [5].…”

“…Recently, Sassen, Witzigmann, Wolk, and Brugger analyzed a Schottky diode using the transfer matrix method in GaAs. Their result was expressed as an integral including the transmission coefficient T, which requires numerical analysis [1]. Shenai and …”

Spin Injection in Spin FETs Using a Step-Doping Profile

“…For spin injection through a Schottky barrier, it was reported that the depletion region is detrimental due to strong and fast space-varying electric filed [17]. However, this effect can be minimized by one of the schemes using the barrier engineering [18], which is to use a high doping layer at the metal/semiconductor interface [16]. Efficient spin injection through a tailored Schottky barrier into a bulk semiconductor has been reported in [15,16].…”