Abstract.A response surface methodology only based in this case on computer experiments was used in conjunction with the desirability concept to optimize a priori an electrodeposition process designed for production of gold-tin alloy bumps on a 4 inches wafer. The efficiency of the method was used to achieve at a cheap cost with a small number of computer experiments the technical specifications required in term of metal deposit thickness uniformity.
Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 gm long and 10 gm wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 gm thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.
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