A quasi-3D model has been developed with the aim of studying the different factors limiting the performance of highbrightness high-power tapered lasers. The model solves the complete semiconductor and thermal equations, neglecting the flow of carriers and heat along the cavity axis, together with a 2D Wide-Angle Beam Propagation method solving the optical propagation. The coupling between electrical, thermal and optical equations yields a stable solution which incorporates carrier and temperature induced perturbations of the refractive index. Although tapered lasers have already demonstrated superior beam quality performance in comparison with broad area devices, they still suffer from beam filamentation at high power levels. We analyze the influence of the different competing factors in the self-focusing process for 980 nm lasers with a gain guided taper section. The simulation results indicate that the lasers with the longest taper section provide the highest output power before the filamentation process is triggered, and that the backward propagating field plays a crucial role in the stability of the output beam..H\ZRUGV Semiconductor lasers, high power lasers, tapered lasers, modeling, numerical simulation.,1752'8&7,21Several applications, such as optical pumping or medical instrumentation, demand high output power lasers with good beam quality. Broad area lasers provide high output power at the cost of poor far field (FF) patterns due to unstable lateral modes. Tapered semiconductor lasers, also known as flared unstable cavity lasers, have demonstrated both high power and good beam quality at different wavelengths 1-8 . These devices consist of a ridge waveguide (RW) section providing a single spatial mode launched into an index or gain guided taper section.The CW operation of tapered single pass amplifiers can be simply understood in terms of beam propagation along a gain region with carrier and temperature index perturbations 2 . The optical output characteristics of tapered lasers are consequence of a complicated interaction between the forward and backward propagating fields and the semiconductor active material. Tapered lasers suffer from filamentation and multi-peak FF patterns at high output power, limiting the maximum optical power to be launched in an optical fiber. Accurate designs tools, taking into account as much as possible the intrinsic three-dimensional nature of the device, are crucial for a better understanding of the underlying physics and for the optimization of the geometry.Previous theoretical models on tapered lasers and amplifiers 1,9,10 have relied on the paraxial approximation for the optical propagation and on simplified unipolar electrical equations. We have developed a quasi-3D model that solves the complete ELSRODU electrical and thermal equations, but neglects the flow of heat and carriers along the propagation axis. The electro-thermal model is coupled to a ZLGHDQJOH 2D beam propagation method (BPM), which accurately solves for the optical field distribution.The model has been...