service Email alerting click here top right corner of the article or Receive free email alerts when new articles cite this article -sign up in the box at the http://esl.ecsdl.org/subscriptions go to: Electrochemical and Solid-State Letters To subscribe toA bipolar resistive switching memory device with a low power operation ͑200 A ϫ 1.3 V͒ in a W/Ge 0.4 Se 0.6 /Cu/Al structure is investigated. A high quality Ge 0.4 Se 0.6 solid electrolyte is confirmed by X-ray photoelectron spectroscopy. The resistive memory device with a small via size of 0.2 m has a large threshold voltage of Ͼ0.4 V, high resistance ratio ͑R high /R low ͒ of Ͼ10 2 , and good uniformity. The switching mechanisms are due to the Cu metallic filament formation and dissolution from the Ge 0.4 Se 0.6 solid electrolyte under positive and negative biases, respectively, which have been confirmed by high resolution transmission electron microscopy image and energy-dispersive X-ray spectroscopy analysis. The strong Cu filament formation can also be investigated by monitoring the erase voltage and erase current. Good endurance of Ͼ10 5 cycles is obtained. Excellent data retention characteristics at 85°C are observed after 24 h of retention time, owing to the strong Cu metallic filament formation in the Ge 0.4 Se 0.6 solid electrolyte.
A novel phase-change memory cell with a doubleconfinement structure was proposed and fabricated in this work. By having an additional bottom Ge 2 Sb 2 Te 5 layer under the electrically confined active region, the heat loss can be effectively prevented. The temperature uniformity over the active region significantly improves and so does the thermal efficiency. Therefore, a low I RESET of about 0.3 mA and a reset power can be achieved. For the SET performance, a pulsewidth as low as 200 ns can be used without compromising the R SET .
A novel method of fabricating HfO x -based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 10 5 cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfO x stacked layer in this letter shows promising application in the next generation of nonvolatile memory.Index Terms-AlCu, HfO x , resistive random access memory (RRAM), trap and detrap.
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