A Novel Cross-Spacer Phase Change Memory with Ultra-Small Lithography Independent Contact Area

Chen, W.S.; Lee, C.; Chao, Der-Sheng; Chen, Y.C.; Chen, F.; Chen, C.W.; Yen, Rainfield Y.; Chen, M.J.; Wang, W.H.; Hsiao, Tsai-Chu; Yeh, Jyi-Tyan; Chiou, Shan-Haw; Liu, M.Y.; Wang, T.C.; Chein, L.L.; Huang, Cheng-Sung; Shih, Neng-Tai; Tu, Liang; Huang, Der‐Ray; Yu, Tianjun; Kao, Ming-Jer; Tsai, Ming-Jinn

doi:10.1109/iedm.2007.4418935

Cited by 19 publications

(9 citation statements)

References 4 publications

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“…The scaling of 'RESET' current therefore becomes highly important for both energy reduction and density expansion. The traditional approaches for downscaling of 'RESET current is to shrink either the heater/PCM interfacial region [64], [65] or the PCM programming volume [66]- [68], leading to the advent of several advanced cell structures such as edge-contact [69], µTrench [70],] ringshaped [71], pillar [72], pore [73], cross-spacer [74], and dash cells [75] (Figure 8). According to the 'RESET' current comparsion among aforementioned cells, 'RESET' current was found to increase proportionally along with the effective contact diameter, as illustrated in Figure 9, and an average 'RESET' current density of ∼40 MA/cm 2 is required to program the RCRAM cell [68].…”

Section: Phase-change Memoriesmentioning

confidence: 99%

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

Liu

Wang

2020

IEEE Access

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Phase-change materials, also well known as the Chalcogenide alloy, have received considerable attention during last two decades owing to its widespread applications in the field of the electrical storage market such as phase-change random access memory and phase-change probe memory. In addition to the storage devices, its unique electrical properties that can be dynamically tunable with respect to the electrical excitations lead to numerous novel applications represented by memristor and memristor-based neuromorphic electrical circuits. These emerging applications undoubtedly allows for a further exploitation of the potential of phase-change materials, and thus makes it advantageous over other storage medium like ferroelectric and magnetic materials. In order to help researchers understand the role of phase-change materials in these novel applications as well as their importance for citizen's daily life, a comprehensive review that not only covers the traditional storage applications, but also the applications on these exotic devices becomes imperative. In this review, the chemical structure of phase-change materials and their remarkable electrical properties are first reviewed, followed by an introduction of their applications on the storage fields. The physical principles of various emerging electrical devices using phase-change materials are subsequently overviewed in association with their state-of-the-art progress. The prospect of phase-change materials for the future non-volatile electrical applications that are yet to be unraveled is finally envisaged.

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Section: Phase-change Memoriesmentioning

confidence: 99%

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

Liu

Wang

2020

IEEE Access

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“…33 is to generate an ultra-small lithographic-independent contact area by substituting the thickness of both the PCM and the low-temperature oxide-spacer sidewalls for a μTrench width. [163,207] As the cross-spacer cell can scale both the electrode and the PCM to a smaller size, the ability to obtain a low reset current of 80 μA using 180 nm technology has been proven. [207] Furthermore, the dash cell in Fig.…”

Section: Other Miscellaneous Pcram Cellsmentioning

confidence: 99%

“…[163,207] As the cross-spacer cell can scale both the electrode and the PCM to a smaller size, the ability to obtain a low reset current of 80 μA using 180 nm technology has been proven. [207] Furthermore, the dash cell in Fig. 34, [208,209] Electron.…”

Section: Other Miscellaneous Pcram Cellsmentioning

confidence: 99%

Physical principles and current status of emerging non-volatile solid state memories

Wang

Yang

Wen

2015

Electron. Mater. Lett.

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Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance.

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“…52) There are various alternatives to the cells described in Fig. 4, such as a bottleneck cell 53) (which has a constricted thin chalcogenide layer), a pillar cell 54) (which has a small cylindrical chalcogenide bar), a cross-spacer cell, 55) a pore cell, 56) and a dash cell. [57][58][59] For example, the pore cell is fabricated utilizing a small pore that is formed during the semiconductor manufacturing process.…”

Section: Pcramsmentioning

confidence: 99%

Review of Emerging New Solid-State Non-Volatile Memories

Fujisaki

2013

Jpn. J. Appl. Phys.

113

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The integration limit of flash memories is approaching, and many new types of memory to replace conventional flash memories have been proposed. Unlike flash memories, new nonvolatile memories do not require storage of electric charges. The possibility of phase-change randomaccess memories (PCRAMs) or resistive-change RAMs (ReRAMs) replacing ultrahigh-density NAND flash memories has been investigated; however, many issues remain to be overcome, making the replacement difficult. Nonetheless, ferroelectric RAMs (FeRAMs) and magnetoresistive RAMs (MRAMs) are gradually penetrating into fields where the shortcomings of flash memories, such as high operating voltage, slow rewriting speed, and limited number of rewrites, make their use inconvenient. For instance, FeRAMs are widely used in ICs that require low power consumption such as smart cards and wireless tags. MRAMs are used in many kinds of controllers in industrial equipment that require high speed and unlimited rewrite operations. For successful application of new non-volatile semiconductor memories, such memories must be practically utilized in new fields in which flash memories are not applicable, and their technologies must be further developed.

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A Novel Cross-Spacer Phase Change Memory with Ultra-Small Lithography Independent Contact Area

Cited by 19 publications

References 4 publications

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

Physical principles and current status of emerging non-volatile solid state memories

Review of Emerging New Solid-State Non-Volatile Memories

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