Low current (5 pA) resistive switching memory using high-&amp;#x043A; Ta&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;5&lt;/inf&gt; solid electrolyte

Maikap, S.; Rahaman, S. Z.; Wu, Tong; Chen, F.; Kao, Ming-Jer; Tsai, Ming-Jinn

doi:10.1109/essderc.2009.5331517

Cited by 10 publications

(12 citation statements)

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“…When negative voltage was applied on the TE electrode, the Cu filament broken due to electrochemical dissolution reaction initiated by an electronic current through the metallic bridge, and, in parallel, an electrochemical current and the device came into HRS. In recent years, many solid electrolyte materials such as GeSe x [11,59,60], GeS [61,62], Cu 2 S [63], Ag 2 S [64], Ta 2 O 5 [65,66], SiO 2 [67], TiO 2 [68], ZrO 2 [69], HfO 2 [70], GeO x [48], MoO x /GdO x [71], TiO x /TaSiO y [72], GeSe x /TaO x [46], CuTe/Al 2 O 3 [73], and Ti/TaO x [22] were reported. The VCM devices consist of a sub-stoichiometric switching material and an inert electrode such as Pt, Ir, Au, etc., or reactive electrode such as W, Al, Ti, Ni, etc.…”

Section: Reviewmentioning

confidence: 99%

TaO x -based resistive switching memories: prospective and challenges

2013

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Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production.

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Section: Reviewmentioning

confidence: 99%

TaO x -based resistive switching memories: prospective and challenges

2013

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“…Two types of electrolytes are currently investigated: sulphides (GeS 2 [1], Cu 2 S [2], Ag 2 S [3], etc.) and oxides (Ta 2 O 5 [4], SiO 2 [5], Al 2 O 3 [6], etc.). Ionic diffusion from the active electrode into the electrolyte creates a conductive bridge between the two electrodes.…”

Section: Introductionmentioning

confidence: 99%

Forming mechanism of Te-based conductive-bridge memories

Mendes

Martínez

Marty

et al. 2018

Applied Surface Science

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International audienceWe investigated origins of the resistivity change during the forming of ZrTe/Al$_2$O$_3$ based conductive-bridge resistive random access memories. Non-destructive hard X-ray photoelectron spectroscopy was used to investigate redox processes with sufficient depth sensitivity. Results highlighted the reduction of alumina correlated to the oxidation of zirconium at the interface between the solid electrolyte and the active electrode. In addition the resistance switching caused a decrease of Zr-Te bonds and an increase of elemental Te showing an enrichment of tellurium at the ZrTe/Al$_2$O$_3$ interface. XPS depth profiling using argon clusters ion beam confirmed the oxygen diffusion towards the top electrode. A four-layer capacitor model showed an increase of both the ZrO$_2$ and AlO$_x$ interfacial layers, confirming the redox process located at the ZrTe/Al$_2$O$_3$ interface. Oxygen vacancies created in the alumina help the filament formation by acting as preferential conductive paths. This study provides a first direct evidence of the physico-chemical phenomena involved in resistive switching of such devices

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“…The non-oxides, i.e., chalcogenides, are GeSe x [10][11][12], GeS 2 [13,14], GeTe [15], Cu 2 S [16], Ag 2 S [8], and so on. The oxide-based materials are Ta 2 O 5 [16,17], SiO 2 [18], ZrO 2 [19], GeO x [20,21], and so on. Other materials such as amorphous Si [22] and Si 3 N 4 [23] have been reported also.…”

Section: Materials and Deposition Methodsmentioning

confidence: 99%

“…To have a CMOS-compatible structure, we reported a Al/Cu/TiO 2 /TaO x /W CBRAM device [29]. The via-hole devices were fabricated as follows [17,28]. A Ta 2 O 5 film with a thickness of 18 nm was deposited from pure Ta 2 O 5 granules using an electron beam evaporator.…”

Section: Materials and Deposition Methodsmentioning

confidence: 99%

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

Jana¹,

Roy²,

Panja³

et al. 2016

Nano Online

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The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The switching mechanism is the formation/dissolution of a metallic filament in the switching materials under external bias. However, the growth dynamics of the metallic filament in different switching materials are still debated. All CBRAM devices are switching under an operation current of 0.1 μA to 1 mA, and an operation voltage of ±2 V is also needed. The device can reach a low current of 5 pA; however, current compliance-dependent reliability is a challenging issue. Although a chalcogenide-based material has opportunity to have better endurance as compared to an oxide-based material, data retention and integration with the complementary metal-oxide-semiconductor (CMOS) process are also issues. Devices with bilayer switching materials show better resistive switching characteristics as compared to those with a single switching layer, especially a program/erase endurance of >10 5 cycles with a high speed of few nanoseconds. Multi-level cell operation is possible, but the stability of the high resistance state is also an important reliability concern. These devices show a good data retention of >10 5 s at >85°C. However, more study is needed to achieve a 10-year guarantee of data retention for non-volatile memory application. The crossbar memory is benefited for high density with low power operation. Some CBRAM devices as a chip have been reported for proto-typical production. This review shows that operation current should be optimized for few microamperes with a maintaining speed of few nanoseconds, which will have challenges and also opportunities for three-dimensional (3D) architecture.

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Low current (5 pA) resistive switching memory using high-к Ta<inf>2</inf>O<inf>5</inf> solid electrolyte

Cited by 10 publications

References 11 publications

TaO x -based resistive switching memories: prospective and challenges

TaO x -based resistive switching memories: prospective and challenges

Forming mechanism of Te-based conductive-bridge memories

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

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