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A noise-cancellingtechnique in a wideband LNA achieves low noise figure (NF) and source impedance matching without global feedback. The 0.25pm LNA provides <2.4dB NF from 0 OI-~GHZ, total voltage gain is 13.7dB, -3dB bandwidth is O.Ol-1.6GHz, S, , is <-36dB, and S,, is <-lOdB. llP2 is 12dBm, and llP3 is OdBm drawing 14mA at 2.5V. F. Bruccoleri

Abstract-This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that a MOSFET is exploited as a voltage-controlled current source (VCCS). This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band low noise amplifier (LNA) has been designed in 0.35-m CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V.

Abstract-Commonly used elementary circuits like single-transistor amplifier stages, the differential pair, and current mirrors basically exploit the transconductance property of transistors. This paper aims at finding all elementary transconductance-based circuits. For this purpose, all graphs of two-port circuits with one or two voltage controlled current sources are generated systematically. This results in 150 graphs of "finite transactance two-port circuits" with at least one nonzero transmission parameter. Each of them can be implemented in various ways using transistors and resistors, covering many commonly required types of two-ports. To illustrate the usefulness of the technique several alternative circuit implementations for current amplifiers and voltage followers are generated. A new wide-band low-noise amplifier generated with the technique was realized in 0.35-m CMOS.

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