Voltage shift and deformation in the hysteresis loop of Pb(Zr,Ti)O3 (PZT) capacitors have been studied by varying the annealing temperature after patterning the top sputter-deposited Pt electrode using reactive ion etch (RIE) with Ar gas. It was observed that the hysteresis loop of the film was seriously deformed by both sputtering and RIE induced defects. Voltage shift and polarization suppression can be explained by the charge trapping at electrode interfaces and at defect levels in the film, respectively. Space charges trapped at defect levels in the film suppress polarization parallel to poling direction, however, enhance polarization opposite to the poling direction.
Electric field shift and deformation in the polarization-electric field characteristics of Pb(Zr,Ti)O3 (PZT) thin film capacitors with various Zr/Ti ratios have been studied as a function of the annealing temperature after patterning the top sputter-deposited Pt electrode using reactive ion etch with Ar gas. A large field shift and a constriction in the hysteresis loops are observed, particularly in low Zr/Ti PZT films annealed below 400 °C. A strong blocking layer effect in unannealed capacitor is found to be related to the internal field caused by trapped charges near electrodes. As the Zr/Ti ratio decreases, the field shift increases and the annealing temperature at which the internal field disappears also increases.
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