Influence of Zr/Ti ratios on the deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin film capacitors

Lee, Eun Gu; Wouters, Dirk J.; Willems, Gert; Maes, H.E.

doi:10.1063/1.118885

Cited by 24 publications

(11 citation statements)

References 14 publications

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“…The argument regarding ion milling damage as the cause of the reduction of , P r , and P s is plausible, since ion milling has been reported to induce space charge in the near surface region that shields the electric field applied and inhibits domain wall motion. [20][21][22] To elucidate this concern, a test heterostructure consisting of MgO/LSCO/PLZT was fabricated, milled for 0, 3, and 5 min, and subjected to ferroelectric and dielectric testing. The values after ion milling were found to be equivalent to those prior to milling once adjusted for a change in film thickness ͑data not shown͒, demonstrating that our milling conditions do not adversely affect the film properties.…”

Section: Resultsmentioning

confidence: 99%

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Tsakalakos

Sands

Carleton

et al. 2003

Journal of Applied Physics

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Articles you may be interested inStructure and properties of W O 3 -doped Pb 0.97 La 0.03 ( Zr 0.52 Ti 0.48 ) O 3 ferroelectric thin films prepared by a sol-gel process Dielectric and ferroelectric properties of compositionally graded (Pb,La)TiO 3 thin films on Pt/Ti/SiO 2 /Si substrates Appl.Single-crystal Pb(Zr x Ti 1−x ) O 3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties Pulsed excimer laser irradiation of an absorbing thin film through a transparent substrate has been employed to separate epitaxial (Pb,La)(Zr,Ti)O 3 ͑PLZT͒ thin films from their MgO growth substrates. The morphology, microstructure, and dielectric properties of the laser-modified PLZT layer generated at the original PLZT/MgO interface by this laser liftoff ͑LLO͒ process was investigated. Atomic force microscopy measurements of the film surface after LLO indicated average surface roughness on the order of 90-100 nm, complementing previously reported scanning electron microscopy studies that revealed what appeared to be a rough glassy layer. The surface roughness is thought to form as the original growth substrate is ejected from the films transferred towards the end of the 38 ns pulse, pulling the molten near-interfacial portion of the PLZT film via surface tension, and followed by quenching of the liquid phase. Transmission electron microscopy of PLZT films transferred to Si wafers showed the surface layer consists of an irregular amorphous layer ranging in thickness from 50 to 100 nm, although some surface features protruded as far as 300 nm. Enhanced levels of lead were found to be present in the amorphous phase by Rutherford backscattering spectrometry, implying PbO evaporation and subsequent condensation during LLO. Electrical measurements determined the relative dielectric constant of the surface layer to be in the range of 40 -70. Subsequent ion milling of the layer demonstrated that the ferroelectric and dielectric properties of the original PLZT films were largely recovered, while the surface roughness was reduced to below 40 nm. The observed differences between the dielectric and ferroelectric properties of the film transferred after complete removal of the amorphous layer compared to those of the film on the original MgO substrate are attributed to the removal of substrate clamping.

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Section: Resultsmentioning

confidence: 99%

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Tsakalakos

Sands

Carleton

et al. 2003

Journal of Applied Physics

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“…17 A possible explanation is the non-ferroelectric passive layer such as air gap or a second phase at the top electrode interface formed by sputtering, and another possibility is that the internal field caused by trapped charges makes domain motions difficult. 25 C. Frequency and temperature dependence of dielectric properties…”

Section: B Piezoelectric and Ferroelectric Propertiesmentioning

confidence: 99%

The dielectric relaxation behavior of (Na0.82K0.18)0.5Bi0.5TiO3 ferroelectric thin film

Dong

Gong

et al. 2011

Journal of Applied Physics

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Piezoresponse and ferroelectric properties of lead-free [ Bi 0.5 ( Na 0.7 K 0.2 Li 0.1 ) 0.5 ] Ti O 3 thin films by pulsed laser deposition Appl. Phys. Lett. 92, 222909 (2008); 10.1063/1.2938364 Piezoelectric property in morphotropic phase boundary Bi 0.5 ( Na 0.82 K 0.18 ) 0.5 Ti O 3 lead free thick film deposited by screen printing Appl. Phys. Lett. 92, 152901 (2008); 10.1063/1.2911744Dielectric and ferroelectric properties of ( Na 0.8 K 0.2 ) 0.5 Bi 0.5 TiO 3 thin films prepared by metalorganic solution deposition (Na 1-x K x ) 0.5 Bi 0.5 TiO 3 (NBT-KBT-100 x) thin films were deposited on Pt/Ti/SiO 2 /Si(100) by metal organic decomposition, and the effects of potassium content (x ¼ 0.15, 0.18, 0.20, 0.25) on ferroelectric, piezoelectric, dielectric properties of the thin films, and the temperature dependence of dielectric permittivity of NBT-KBT-18 thin film were investigated in detail. NBT-KBT-18 thin film is of the largest effective piezoelectric coefficient d 33eff , remnant polarization 2P r , spontaneous polarization 2 P s , dielectric constant e r , and the lowest dielectric loss among the thin films. The dielectric constants decrease steeply with the increase of frequency, and there are a series of resonance peaks with Debye-like relaxation. In dielectric temperature spectra, two abnormal peaks corresponding to depolarization temperature and Curie temperature are at the range of 75-90 C and 295-320 C, and they are associated with the phase transitions. Based on the dielectric relaxation theory, Debye-like relaxation and diffused phase transition/frequency dispersion are interpreted by space charge polarization and polar nanoregions. Because of the centrosymmetric paraelectric phase, the 2 P s and e r of NBT-KBT-100 x thin film are responsible for the d 33eff according to phenomenological equation. The improved d 33eff may make NBT-KBT-18 thin film a promising candidate for piezoelectric thin film devices, and the enhanced Curie temperature will offer useful guidelines of safe working temperature for potential application in micro-electro-mechanical system.

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“…16,[19][20][21][22][23]41 It is generally agreed that PZT thin films with compositions near the morphotropic phase boundary (x ϳ 0.53) exhibit higher dielectric constants than other compositions and that the coercive field increases with the Ti content (more tetragonal-like). Extensive electrical characterizations on films with a range of Zr/Ti ratios have shown that their properties, including dielectric constant, remanent polarization, coercive field, and pyroelectric coefficient, depend strongly on its B-site cation composition.…”

Section: Introductionmentioning

confidence: 99%

“…Extensive electrical characterizations on films with a range of Zr/Ti ratios have shown that their properties, including dielectric constant, remanent polarization, coercive field, and pyroelectric coefficient, depend strongly on its B-site cation composition. 20,41 Recently, an increase of remanent polarization with increased Ti content from x 0.2-0.6 has been reported for sol-gel-derived PZT films after optimum annealing. The remanent polarization was shown by some groups to be the lowest when x approached the phase boundary, 16,22 whereas different "x dependence" of these properties had also been reported.…”

Section: Introductionmentioning

confidence: 99%

“…16,[19][20][21][22][23]41 It is generally agreed that PZT thin films with compositions near the morphotropic phase boundary (x ϳ 0.53) exhibit higher dielectric constants than other compositions and that the coercive field increases with the Ti content (more tetragonal-like). 41 The studies of the composition dependence of fatigue characteristics also showed various results for the PZTbased capacitors. 20,41 Recently, an increase of remanent polarization with increased Ti content from x 0.2-0.6 has been reported for sol-gel-derived PZT films after optimum annealing.…”

Section: Introductionmentioning

confidence: 99%

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Grain morphology and cation composition heterogeneity of Pb(Zr_xTi_1–x)O₃ thin films deposited by metal-organic chemical vapor deposition

et al. 1998

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The preferred orientation, grain morphology, and composition heterogeneity of the polycrystalline Pb(Zr x Ti 12x )O 3 (PZT) thin films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and x-ray energy dispersive spectroscopy (EDS). PZT thin films with nominal x 0.5 were grown by metal-organic chemical vapor deposition (MOCVD) on (110)-and (101)-textured RuO 2 bottom electrodes at temperatures <525 ± C. Columnar grain microstructure with strongly faceted surface morphology was observed in both films. The grain morphology and surface roughness of the PZT films were observed to depend on those of the underlying RuO 2 layers. TEM-EDS analysis shows notable cation composition heterogeneity in length scales of 0.2-2 mm. Pronounced Pb composition deficiency and heterogeneity were also observed in PZT/(110)RuO 2 in length scales above 40 mm. The grain morphology and cation heterogeneity of the PZT films are discussed on the basis of diffusion-limited columnar growth mechanism.

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Influence of Zr/Ti ratios on the deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin film capacitors

Cited by 24 publications

References 14 publications

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

The dielectric relaxation behavior of (Na0.82K0.18)0.5Bi0.5TiO3 ferroelectric thin film

Grain morphology and cation composition heterogeneity of Pb(Zr_xTi_1–x)O₃ thin films deposited by metal-organic chemical vapor deposition

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Influence of Zr/Ti ratios on the deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin film capacitors

Cited by 24 publications

References 14 publications

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates

The dielectric relaxation behavior of (Na0.82K0.18)0.5Bi0.5TiO3 ferroelectric thin film

Grain morphology and cation composition heterogeneity of Pb(ZrxTi1–x)O3 thin films deposited by metal-organic chemical vapor deposition

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Product

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Grain morphology and cation composition heterogeneity of Pb(Zr_xTi_1–x)O₃ thin films deposited by metal-organic chemical vapor deposition