Silicon nanowire-based solar cells on metal foil are described. The key benefits of such devices are discussed, followed by optical reflectance, current-voltage, and external quantum efficiency data for a cell design employing a thin amorphous silicon layer deposited on the nanowire array to form the p-n junction. A promising current density of ∼1.6mA∕cm2 for 1.8cm2 cells was obtained, and a broad external quantum efficiency was measured with a maximum value of ∼12% at 690nm. The optical reflectance of the silicon nanowire solar cells is reduced by one to two orders of magnitude compared to planar cells.

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A two-step process consisting of low temperature growth followed by rapid thermal annealing is demonstrated for Ru/(Pb,La)(Zr,Ti)O3 (PLZT)/Ru ferroelectric capacitors directly on silicon. PLZT is a promising material for Gbit-scale ferroelectric memories, but its growth on silicon has proved challenging. The two-step process is designed to enable nucleation of perovskite phase PLZT while limiting diffusion which often leads to device failure. Minimization of stress and interdiffusion during film growth were necessary to optimize the remanent polarization. (Pb-4%La)(Zr0.3Ti0.7)O3 capacitors with remanent polarizations up to 17 μC/cm2 were grown on Ru/Si at 400 °C and 50 mTorr O2 using pulsed laser deposition. Direct high temperature growth (>600 °C) was not possible due to interface reactions, and film cracking was observed at low temperatures as well as at high and low oxygen pressures.