Elucidation of the switching processes in tetragonal pzt by hysteresis loop and impedance analysis

Wouters, Dirk J.; Willems, Gert; Lee, Eun Gu; Maes, H.E.

doi:10.1080/10584589708015698

Cited by 30 publications

(17 citation statements)

References 10 publications

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“…In the Ti-rich compositions, a preferential orientation of the films along the polar axis ( 001 for the tetragonal phase) is usually sought, although an orientation along the 111 direction may be more desirable for memory applications because the absence of ferroelastic effects results in a high remnant polarization and abrupt switching behavior [8]. If no other driving force is present, the reported natural preferential orientation obtained in lead titanate derived films is a mixed 100 , 001 orientation [9].…”

Section: Introductionmentioning

confidence: 99%

Local Piezoelectric Properties of Oriented PZT Based Ferroelectric Thin Films

et al. 2006

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A series of PZT based ferroelectric thin films obtained by multitarget sputtering with different preferential orientations are studied by piezoresponse force microscopy (PFM). The modification of the substrate by the deposition of an extra TiO x layer, and the use of MgO-based substrates instead of the usual Si-based ones, change the preferential orientation of the films. The results of the analysis of the local piezoelectric properties allow us to discuss the origin of some special features observed, like the appearance of protruding grains in films with specific orientations, and the homogeneity of the piezoelectric performance at the nanoscale.

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Section: Introductionmentioning

confidence: 99%

Local Piezoelectric Properties of Oriented PZT Based Ferroelectric Thin Films

et al. 2006

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“…In lead titanate-derived compositions, an orientation along Ͻ001Ͼ, the polar axis, is sought for pyroelectric applications, whereas Ͻ111Ͼ-oriented films are more desirable for memory applications because of the absence of ferroelastic effects that result in a high remnant polarization and abrupt switching behavior. 8 Although efforts have been devoted to find the optimal preparation conditions to fabricate highly oriented films using CSD, 9 -11 the mechanisms that lead to the development of a specific texture are not completely understood. It is accepted that the occurrence of preferential orientations is mainly the consequence of heterogeneous nucleation of the perovskite phase on the film-substrate interface.…”

Section: Introductionmentioning

confidence: 99%

Texture Development in Modified Lead Titanate Thin Films Obtained by Chemical Solution Deposition on Silicon‐Based Substrates

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Algueró

et al. 2003

Journal of the American Ceramic Society

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An advanced method of X-ray diffractometry analysis, the quantitative texture analysis, is used in this work to study the preferential orientations of ferroelectric lanthanum-modified lead titanate thin films, to establish the factors affecting their development. The new, more reliable, texture data obtained allows us to discuss previous models of texture development in chemical-solution-deposited films. The results show that a fiber type, mixed <100>,<001> preferential orientation, is obtained when high heating rates are used during crystallization. The degree of texture of these films decreases when successive layers are deposited before a simultaneous crystallization of the ensemble is conducted. This undesirable effect is avoided through layer-by-layer crystallization, because of the preferential nucleation of <100>,<001> crystals at the interface between layers. The use of a titanium layer on the platinized silicon-based substrate leads to the development of an additional fiber <111> texture component. In this case, the layer-by-layer crystallization process cannot avoid the loss of the degree of orientation (texture index) with the increase of film thickness. This is mainly caused by the appearance of interlayer porosity, which disrupts the growth of <111>-oriented grains into upper layers.

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“…However, the present study shows that film B with larger porosity has higher P r , which can be attributed to their different domain structures. It is expected that the grains of the tetragonal PLZT thin films exhibit a 901 and 1801 multi-domain structure [11,12]. These domains contribute to the ferroelectric switching of PLZT thin films by domain wall motion.…”

Section: Resultsmentioning

confidence: 98%