Articles you may be interested inNondestructive dopant profile measurement and its quantitative analysis using the nanocapacitance-voltage method J.Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistorIn this article, we present a new one-dimensional ͑1D͒ dopant profile determination method, which extends to the quantitative three-dimensional ͑3D͒ dopant profile extraction. This nondestructive method, which is different from the common scanning capacitance microscopy ͑SCM͒ measurement/dopant extraction, can potentially measure real metal-oxide-semiconductor field-effect transistor devices having 3D structure. Through SCM modeling, we found that the depletion layer in silicon was of a form of a spherical capacitor with the SCM tip biased. Two-dimensional ͑2D͒ finite differential method code with a successive over relaxation ͑SOR͒ solver has been developed to model the measurements by SCM of a semiconductor wafer that contains an ion-implanted impurity region. Then, we theoretically analyzed the spherical capacitor and determined the total depleted-volume charge Q, capacitance C, and the rate of capacitance change with bias dC/dV. It is very important to observe the depleted carriers' movement in the silicon layer by applying the bias to the tip. So, we calculated the depleted-volume charge, considering different factors such as tip size, oxide thickness, and applied bias ͑dcϩac͒, which have an influence on potential and depletion charges. Finally, we developed a 1D inversion algorithm to convert the SCM output (dC/dV) into real dopant concentration, comparing the SCM signal output with the calculated dC/dV. Using the inversion modeling, we have quantitatively extracted the 1D dopant profile from the SCM dC/dV vs V curves.
Abstract:We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. The best blue emitting OLED and red emitting OLED characteristics were obtained at a concentration of 12 vol.% FIrpic and 1 vol.% Bt2Ir(acac) in UGH3, respectively. And the optimum thickness of the total emitting layer was 25 nm. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue/red, blue/red, red/blue and co-doping emitting layer structures were fabricated using a host-dopant system. In case of white PHOLEDs with co-doping structure, the best efficiency was obtained at a structure UGH3: 12 vol. % FIrpic: 1 vol.% Bt2Ir(acac) (25 nm). The maximum brightness, current efficiency, power efficiency, external quantum efficiency, and CIE (x, y) coordinate were 13,430 cd/㎡, 40.5 cd/A, 25.3 lm/W, 17 % and (0.49, 0.47) at 1,000 cd/㎡, respectively.
We propose a new method that can quantitatively extract the dopant profile in a nondestructive manner using scanning capacitance microscopy ͑SCM͒ or a nanocapacitance-voltage (nano-C -V) system. The method is based on a nanotip capacitor model, and not the common parallel-plate capacitor model. For the first time, we have physically analyzed a nanotip capacitor by considering the interaction between the air and a semiconductor and have calculated the full C -V curves and the rate of capacitance change with bias (dC/dV). We calculated the local dC/dV curve that was matched to the experimental dC/dV data. This quasi-three-dimensional modeling illustrates that the C -V characteristics derived from the nanotip model are different from those of a conventional parallel-plate method. We found that the increase in capacitance in the inversion region ͑characterized by a double peak in the dC/dV curve͒ is due to the quasispherical characteristics of the depleted layer generated by the nanotip located in the air. These results enable the quantification of dopant profiles in a step-by-step process using a one-dimensional inversion algorithm, and their subsequent comparison with a secondary ion mass spectroscopy profile.
Influence of the noble gas mixture composition on the performance of a plasma display panel Influence of gas mixture ratio on the luminous efficiency in surface discharge alternating current plasma display panelsWe propose the optimal mixing ratio of Ar or Kr in Ne ͑96%͒-Xe ͑4%͒ and He ͑70%͒-Ne ͑27%͒-Xe ͑3%͒ to improve the luminance and luminous efficiency for alternating current plasma display panels. To verify the improvements, we measured the voltage, current, and luminance experimentally. We analyzed the luminous efficiency and the wall charge using the Q -V method and compared the results with the calculated values from a two-dimensional simulation. When a small amount of Ar ͑0.01%-0.1%͒ or Kr ͑0.01%-0.1%͒ was added to Ne-Xe or He-Ne-Xe at 200 Torr, we found that the luminance increased by more than 20%, the luminous efficiency increased by more than 25% and the wall charge increased by more than 25%. When a small amount of Ar ͑0.005%-0.1%͒ was added to He-Ne-Xe-Kr ͑0.005%͒ at 400 Torr, the luminance increased by more than 8%, the luminous efficiency increased by more than 18%, and the wall charge increased by more than 12%. In conclusion, these results showed that the additional Penning effect between He and Ne and Ar and Kr particles improved the luminance and luminous efficiency.
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