No abstract

We investigated mechanical deformations of Cu{100} nanowires using the steepest-descent method. We simulated the cases of elongation, shearing, rotation and rotated elongation. Before the first yielding nanowires preserve the elastic stage, and after this mechanical deformations proceed in alternating quasi-elastic and yielding stages. In the case of rotation deformation, the torque was inversely proportional to the tension force. It was shown that a nanowire in the case of rotated elongation is deformed more easily than one in cases of both elongation and rotation.

No abstract

No abstract

No abstract

Activation and deactivation in heavily boron-doped silicon using ultra-low-energy ion implantationWe have investigated effects of atomic dynamics for ultra-low-energy As and B ion implants using a highly efficient molecular dynamics scheme. We simulated ion implantation by molecular dynamics simulation using the recoil ion approximation method and the local damage accumulation model proposed in the article. The Local damage accumulation probability function consists of deposited energy in a unit cell, implant dose rate, target material, projectile atom, and the history of the recoil event in a cell. The results of simulations agree with the experimental results. The MDRANGE results considering no damage were different from the tail region. Using the local damage accumulation model and the recoil ion approximation method, we simulated dopant two-dimensional profiles and two-dimensional damage profiles.

The effects of addition of deuterium (D2) to conventional gases [Ne (92%)–Xe (8%) and He (70%)–Ne (27%)–Xe (3%)] on discharge characteristics were investigated in this work, with the aim of improving luminance and luminous efficiency as well as achieving low sustain voltage. When the gas-inlet amounts of D2 added to Ne–Xe or He–Ne–Xe gas-inlet mixture were varied from 0 to 0.1%, we measured the sustain voltage, the luminance, the luminous efficiency and the wall charge corresponding to each gas-inlet. The addition of extremely small gas-inlet amounts of D2 increased the number of electrons, which improves the Xe* density [Xe*(1s4)→Xe+hν(147 nm)]. As a result, luminance and luminous efficiency increased while the sustain voltage decreased.

No abstract