Activation and deactivation in heavily boron-doped silicon using ultra-low-energy ion implantationWe have investigated effects of atomic dynamics for ultra-low-energy As and B ion implants using a highly efficient molecular dynamics scheme. We simulated ion implantation by molecular dynamics simulation using the recoil ion approximation method and the local damage accumulation model proposed in the article. The Local damage accumulation probability function consists of deposited energy in a unit cell, implant dose rate, target material, projectile atom, and the history of the recoil event in a cell. The results of simulations agree with the experimental results. The MDRANGE results considering no damage were different from the tail region. Using the local damage accumulation model and the recoil ion approximation method, we simulated dopant two-dimensional profiles and two-dimensional damage profiles.
In this article we describe a newly proposed and consistent damage model in Monte Carlo simulation for the accurate prediction of a three-dimensional as-implanted impurity profile and point defect profile induced by ion implantation in ͑100͒ crystal silicon. An empirical electronic energy loss model for B, BF 2 , As, P, and Si self-implants over a wide energy range has been proposed for silicon-based semiconductor device technology and development. Our model shows very good agreement with secondary ion mass spectrometry data over a wide energy range. For damage accumulation, we have considered the self-annealing effects by introducing our proposed nonlinear recombination probability function of each point defect for computational efficiency. For the damage profiles, we compared the published Rutherford backscattering spectrometry ͑RBS͒/ channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreements with the RBS/channeling experiments for phosphorus implants.
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