Ultra-low-energy ion-implant simulation using computational-efficient molecular dynamics schemes and the local damage accumulation model

Kang, Jeong-Won; Kang, E. S.; Son, Myung-Sik; Hwang, Ho-Jung

doi:10.1116/1.591211

Cited by 3 publications

(2 citation statements)

References 10 publications

(7 reference statements)

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“…15 Previous investigations have sought to arrive at a straightforward correlation between the SCM signal and doping concentration in semiconductors. 21 This connection requires either that the dopant density be known at one measured position 14,15,20 or that the dopant profile and doping concentration be extracted only over a narrow range. 22 The absence of a well-established model or algorithm for direct conversion of SCM signal to doping concentration motivated us to employ standard samples with staircase doping profiles, as we did for SSRM.…”

Section: B Scmmentioning

confidence: 99%

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

Ban¹,

Sargent²,

Dixon‐Warren

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report results of a scanning spreading resistance microscopy ͑SSRM͒ and scanning capacitance microscopy ͑SCM͒ study of the distribution of charge carriers inside multi-quantum-well ͑MQW͒ buried heterostructure ͑BH͒ lasers. We demonstrate that individual quantum-well-barrier layers can be resolved using high-resolution SSRM. Calibrated SSRM and SCM measurements were performed on the MQW BH laser structure, by utilizing known InP dopant staircase samples to calibrate the instrumentation. Doping concentrations derived from SSRM and SCM measurements were compared with the nominal values of both p-and n-doped regions in the MQW BH lasers. For n-type materials, the accuracy was bias dependent with SSRM, while for SCM, excellent quantitative agreement between measured and nominal dopant values was obtained. The SSRM was able to measure the dopant concentration in the p-type materials with ϳ30% accuracy, but quantitative measurements could not be obtained with the SCM. Our results demonstrate the utility of combining calibrated SSRM and SCM to delineate quantitatively the transverse cross-sectional structure of complex two-dimensional devices such as MQW BH lasers, in which traditional one-dimensional probing using secondary ion mass spectroscopy provides only a partial picture of internal device structure.

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Section: B Scmmentioning

confidence: 99%

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

Ban¹,

Sargent²,

Dixon‐Warren

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…This method has successfully produced accurate dopant density profiles of ion-implanted semi-conductor wafers [6,7] at ion energies in the range of 10keV-100keV initial energy with minimal empirical fitting of model parameters. The approach has subsequently been reproduced by other groups [8,9] who also studied semiconductor doping by ion irradiation.…”

Section: Introductionmentioning

confidence: 99%

Efficient parallel algorithm for statistical ion track simulations in crystalline materials

Jeon

Grønbech‐Jensen

2009

Computer Physics Communications

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We present an efficient parallel algorithm for statistical Molecular Dynamics simulations of ion tracks in solids. The method is based on the Rare Event Enhanced Domain following Molecular Dynamics (REED-MD) algorithm, which has been successfully applied to studies of, e.g., ion implantation into crystalline semiconductor wafers. We discuss the strategies for parallelizing the method, and we settle on a host-client type polling scheme in which a multiple of asynchronous processors are continuously fed to the host, which, in turn, distributes the resulting feed-back information to the clients. This real-time feed-back consists of, e.g., cumulative damage information or statistics updates necessary for the cloning in the rare event algorithm. We finally demonstrate the algorithm for radiation effects in a nuclear oxide fuel, and we show the balanced parallel approach with high parallel efficiency in multiple processor configurations.

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Electrical and optical properties of the CdS quantum wells of CdS/ZnSe heterostructures

Dremel¹,

Priller²,

Grün³

et al. 2003

Journal of Applied Physics

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Earlier we reported the investigation of the electrical properties of selectively doped and degenerate CdS/ZnSe quantum heterostructures grown by molecular beam epitaxy [V. Kažukauskas, M. Grün, St. Petillon, A. Storzum, and C. Klingshirn, Appl. Phys. Lett. 74, 395 (1999)]. The maximum Hall mobilities in these heterostructures were found to be less than 400 cm2/Vs. In the present work we analyze in detail the scattering mechanisms in order to increase the carrier mobility and to optimize these quantum structures. We demonstrate that the Hall mobility can reach in the CdS quantum wells at low temperatures 2800 cm2/V s for slightly doped structures, having an effective sheet carrier density 2.6×1011 cm−2. In these structures the mobility is mostly limited by interface alloying scattering. At high doping levels carriers become redistributed between the quantum well and the ZnSe doped layer. This causes the parallel conductivity phenomena, which diminishes the effective mobility. Near room temperature the scattering by optical phonons prevails which is superimposed by dislocation scattering.

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Ultra-low-energy ion-implant simulation using computational-efficient molecular dynamics schemes and the local damage accumulation model

Cited by 3 publications

References 10 publications

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

Efficient parallel algorithm for statistical ion track simulations in crystalline materials

Electrical and optical properties of the CdS quantum wells of CdS/ZnSe heterostructures

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