In this paper, a global method is proposed to characterize the electrothermal behavior of multi-fingered Pseudomorphic HighElectron-Mobility 'lkansistors (PHEMTs). The method is based on the coupling of circuit, electromagnetic and thermal softwares. It is shown that scaling rules have just to be applied for intrinsic performances of a transistor when extrinsic elements and thermal effects are rigorously taken into account.
The packaged MMIC design and measured performance of a High Linearity and Low Noise Amplifier from 12 to 30GHz are reported in this paper. A mature 0.25,um gate length Low Noise Pseudomorphic HEMT technology has been used with a BCB-based protection allowing easy and high reliability chip integration into plastic packages. A standard plastic QFN SMD package has been successfully used: 25dB typical gain has been measured with less than 2.0 dB noise figure in all the frequency band from 12 to 30GHz and more than 26dBm Output IP3 has been measured in the 18-26GHz frequency band.
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