Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band

Giacomo-Brunel, Valeria Di; Byk, Estelle; Chang, Christophe; Grünenpütt, Jan; Lambert, Benoît; Mouginot, Guillaume; Sommer, Daniel; Jung, Helmut; Camiade, M.; Fellon, P.; Floriot, D.; Blanck, H.; Viaud, J.P.

doi:10.23919/eumic.2018.8539905

Cited by 21 publications

(5 citation statements)

References 2 publications

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“…With respect to the previous generation of GaN HEMTs featuring 0.25-µm gate-length mainly targeting X-band applications [2], GaN processes for 5G FR2 must implement gate lengths ≤ 0.15 µm to provide f T > 35 GHz and an effective performance in the Ka-band [3]. At the same time, they must become economically viable for low-cost communications applications.…”

Section: Introductionmentioning

confidence: 99%

Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

et al. 2021

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Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 μm) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV, pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects.

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Section: Introductionmentioning

confidence: 99%

Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

et al. 2021

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“…b) Benchmark of P out and associated PAE with Al x Ga (1− x ) N/GaN‐based devices ( x ≤ 0.3) with Schottky gate operated at 28–31 GHz. [ 38–47 ]…”

Section: Hemt Resultsmentioning

confidence: 99%

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Chen¹,

Wen²,

Thorsell

et al. 2022

Physica Status Solidi (a)

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The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT) heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free AlN nucleation layer is studied. This is the first time demonstration of a buffer‐free epi‐structure grown with metal–organic chemical vapor deposition with thin GaN channel thicknesses, ranging from 250 to 150 nm, without any degradation of the structural quality and 2DEG properties. The HEMTs with a gate length of 70 nm exhibit good DC characteristics with peak transconductances of 500 mS mm−1 and maximum saturated drain currents above 1 A mm−1. A thinner GaN channel layer improves 2DEG confinement because of the enhanced effectiveness of the AlN nucleation layer acting as a back‐barrier. An excellent drain‐induced barrier lowering of only 20 mV V−1 at a VDS of 25 V and an outstanding critical electric field of 0.95 MV cm−1 are demonstrated. Good large‐signal performance at 28 GHz with output power levels of 2.0 and 3.2 W mm−1 and associated power‐added efficiencies of 56% and 40% are obtained at a VDS of 15 and 25 V, respectively. These results demonstrate the potential of sub‐100 nm gate length HEMTs on a buffer‐free GaN‐on‐SiC heterostructure.

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“…Gan-based HEMTs are popular because of their huge advantages in millimeter wave and radio frequency fields. For example, GaN processes for 5G FR2 must achieve gate length ≤0.15 µm to provide effective performance [69]. At the same time, they must be economically viable in low-cost communications applications.…”

Section: The Reliability Of Gan Hemt Devicesmentioning

confidence: 99%

Research Progress and Development Prospects of Enhanced GaN HEMTs

et al. 2023

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With the development of energy efficiency technologies such as 5G communication and electric vehicles, Si-based GaN microelectronics has entered a stage of rapid industrialization. As a new generation of microwave and millimeter wave devices, High Electron Mobility Transistors (HEMTs) show great advantages in frequency, gain, and noise performance. With the continuous advancement of material growth technology, the epitaxial growth of semiconductor heterojunction can accurately control doping level, material thickness, and alloy composition. Consequently, HEMTs have been greatly improved from material structure to device structure. Device performance has also been significantly improved. In this paper, we briefly describe MOCVD growth technology and research progress of GaN HEMT epitaxial films, examine and compare the “state of the art” of enhanced HEMT devices, analyze the reliability and CMOS compatibility of GaN devices, and look to the future directions of possible development.

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Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band

Cited by 21 publications

References 2 publications

Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Research Progress and Development Prospects of Enhanced GaN HEMTs

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