Research Progress and Development Prospects of Enhanced GaN HEMTs

Abstract

With the development of energy efficiency technologies such as 5G communication and electric vehicles, Si-based GaN microelectronics has entered a stage of rapid industrialization. As a new generation of microwave and millimeter wave devices, High Electron Mobility Transistors (HEMTs) show great advantages in frequency, gain, and noise performance. With the continuous advancement of material growth technology, the epitaxial growth of semiconductor heterojunction can accurately control doping level, material thickness, and alloy composition. Consequently, HEMTs have been greatly improved from material structure to device structure. Device performance has also been significantly improved. In this paper, we briefly describe MOCVD growth technology and research progress of GaN HEMT epitaxial films, examine and compare the “state of the art” of enhanced HEMT devices, analyze the reliability and CMOS compatibility of GaN devices, and look to the future directions of possible development.

Recent Progress in Source/Drain Ohmic Contact with β-Ga2O3

“…Thus, new-material devices should be investigated for operating at high temperatures, at high power, and in harsh environments. In recent years, wide-bandgap semiconductors including GaN (3.4 eV) and SiC (3.25 eV) have been developed, and they have replaced Si-based techniques in many fields due to their advantages in terms of their material properties [1][2][3][4][5]. Recently, β-Ga 2 O 3 , which is mostly thermally and chemically stable in five polymorphs [6][7][8], has attracted more and more attention for power applications because β-Ga 2 O 3 has a wide bandgap of 4.6-4.9 eV and a breakdown field strength as high as 8 MV/cm [9][10][11].…”