Single and dual input packaged 5.5–6.5GHz, 20W, Quasi-MMIC GaN-HEMT Doherty Power Amplifier

Ayad, Mohammed; Byk, Estelle; Neveux, Guillaume; Camiade, M.; Barataud, Denis

doi:10.1109/mwsym.2017.8058804

Cited by 16 publications

(2 citation statements)

References 10 publications

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“…They offer a balance between performance and cost effectiveness compared to MMIC designs with expensive GaN/SiC wafers. These quasi-MMIC PAs provide excellent performance while meeting size constraints and remaining cost-effective, making them an attractive choice for microcell applications [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands

Chiou,

Lin,

Chang

2023

Electronics

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This paper presents two power amplifiers designed for 5G NR n77 and n78 bands. These power amplifiers were fabricated using WINTM Semiconductors’ 0.25 μm GaN/SiC technology and GaAs IPD technology. To achieve a reduction in costs, GaAs IPD technology was incorporated in the design, leading to the realization of a quasi-monolithic microwave integrated circuit design. To ensure high power, high efficiency, and broadband operation, a continuous Class-J mode output matching network was utilized. The power amplifier with split chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.85 GHz to 4.48 GHz, a saturation power of 40.3 dBm, and a peak power-added efficiency of 39.5%. On the other hand, the power amplifier with stack chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.84 GHz to 4.47 GHz, a saturation power of 40 dBm, and a peak power-added efficiency of 36.5%. For a 5G NR FR1 256-QAM 100-MHz bandwidth modulated signal with a frequency range of 3.3 GHz to 4.2 GHz, both the split and stack chip-on-board wire-bond assembly power amplifiers achieved average output powers of 29.6 dBm and 28.3 dBm, respectively. These output powers were measured under an error vector magnitude requirement of 3.5%.

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Section: Introductionmentioning

confidence: 99%

High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands

Chiou,

Lin,

Chang

2023

Electronics

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“…Recent advances on GaN substrates, present better operating conditions than their predecessor technologies, attracting a renewed interest in the development of nitride devices [10,11], on the other hand, despite the fact that the cost of these components remains high and its availability relatively low, academic and scientific interest has increased over time, opening an area with great growth potential, accelerating progress in the development of various electronic and optoelectronic devices today. This paper presents a review of the emerging emergence of new switching technologies based on GaN devices applied to power electronics and renewable energy systems.…”

Section: Introductionmentioning

confidence: 99%

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

Rodríguez-Benítez¹,

Silva²,

Hernández-González³

et al. 2018

Preprint

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Power semiconductor devices are essential from the operation point of view, size, efficiency and cost, these components are used in a myriad of applications, providing features that make them an important part of the system in which they are operating. This document analyzes and compares the basic structure, properties, design aspects, as well as temperature performance, stability and switching losses, present in devices on silicon (Si), silicon carbide (SiC) and new generation devices fabricated in gallium nitride (GaN) applied in renewable energy systems. The main objective is determinate the viability of the new generation components, which present a superior performance in view of an increase in efficiency, conductivity, decreases in switching losses, lower resistances and parasitic capacitances as well as higher operating frequency range. Therefore demonstrating the GaN components are a strong and viable candidate to solve some of the problems present in renewable energy systems.

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A Hybrid Integrated and Low-Cost Multi-Chip Broadband Doherty Power Amplifier Module for 5G Massive MIMO Application

Huang,

Lv,

et al. 2024

Engineering

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Single and dual input packaged 5.5–6.5GHz, 20W, Quasi-MMIC GaN-HEMT Doherty Power Amplifier

Cited by 16 publications

References 10 publications

High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands

High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

A Hybrid Integrated and Low-Cost Multi-Chip Broadband Doherty Power Amplifier Module for 5G Massive MIMO Application

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