Plastic Packaged High Linearity Low Noise Amplifier for 12-30GHz Multi-band Telecom Applications

Byk, Estelle; Quentin, P.; Camiade, M.; Tranchant, S.

doi:10.1109/mwsym.2006.249787

Cited by 3 publications

(2 citation statements)

References 1 publication

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“…HEMTs amplifiers with both low noise and high linearity performances are important for microwave receiver applications [1]- [2]. A scalable HEMT device model is thus required to accurately predicate nonlinear signal as well as noise performances.…”

Section: Introductionmentioning

confidence: 99%

Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Zhu

Wei

Klimashov

et al. 2008

2008 European Microwave Integrated Circuit Conference

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Explicit expressions describing the gate width dependences of HEMTs noise parameters have been obtained experimentally. The minimum noise figure and optimum source admittance are proportional to gate width, and noise resistance is inversely proportional to gate width. A scalable noise model is then developed, which accurately predicates noise parameters in a broad gate width range. The scalable noise model can be attached to any nonlinear signal model to predicate both noise and nonlinear signal responses.

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Section: Introductionmentioning

confidence: 99%

Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Zhu

Wei

Klimashov

et al. 2008

2008 European Microwave Integrated Circuit Conference

View full text Add to dashboard Cite

show abstract

“…For modern communications, design of PHEMT amplifiers with both low noise and high linearity performances are critical and challenging [1,2]. It is highly desired to have a comprehensive and accurate large-signal model to predict both noise and linearity for various gate-widths and gatenumbers of devices.…”

Section: Introductionmentioning

confidence: 99%

Scaleable two-current low-noise phemt model that predicts IP3

Wei

Zhu

Tkachenko

et al. 2008

2008 Asia-Pacific Microwave Conference

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Correlation of IP3 in a phemt to the third derivative of Ids wrt Vgs, or Gm3 is addressed. A non-linear large-signal Phemt model was developed based on the fitting RF Gm characteristics as well as IV/CV. Systematic extraction approach is described. In extraction, RF Gm fitting minimizes the errors between modelled and measured Gm3. Scale-ability in terms of DC, S-parameters and IP3 is demonstrated. For large-size devices, other factors, such as RF-Gds characteristics, are also important. The over-all model includes also physics-based selfheating and scaleable measurement-based noise equations that makes it the most comprehensive and most practical LN_FET model in industry.

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Millimeter-wave SMT low cost plastic packages for automotive RADAR at 77GHz and high data rate E-band radios

Alleaume

Toussain

Huet

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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The cost of the millimeter-wave functions in the system overall price is today one of the main limiting factor for new high frequencies applications like wide band automotive RADARs or high data rate radios. A big difficulty for the new devices above 60GHz is to be intrinsically low cost, but also to comply with simple and standard assembly techniques at the module level. This very hard challenge has already been overcome for applications below 40GHz with low cost plastic Quad Flat NoLead packages (QFN) in the last three years. This generation of plastic packages has strongly contributed to decrease the weight of packaging and assembly in the system's cost. It has also enabled the assembly of microwave devices on standard SMT lines achieving industrial and competitive microwave solutions. Today, the same demand exists for millimeter-wave applications. And plastic packaging solutions has to be pushed to their limits to fulfill these objectives. This paper will present new ultra-low cost packaging concepts involving plastic over-molding techniques. The realization of a 77GHz transmitter for automotive RADAR packaged in a plastic QFN will be detailed.

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Plastic Packaged High Linearity Low Noise Amplifier for 12-30GHz Multi-band Telecom Applications

Cited by 3 publications

References 1 publication

Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Scaleable two-current low-noise phemt model that predicts IP3

Millimeter-wave SMT low cost plastic packages for automotive RADAR at 77GHz and high data rate E-band radios

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