We conducted the present study to design and manufacture a semi-transparent organic solar cell (ST-OSC). First, we formed a transparent top contact as MoO3/Ag/MoO3 in a dielectric/metal/dielectric (DMD) structure. We performed the production of an FTO/ZnO/P3HT:PCBM/MoO3/Ag/MoO3 ST-OSC by integrating MoO3/Ag/MoO3 (10/$$d_{m}$$ d m /$$d_{{od}}$$ d od nm) instead of an Ag electrode in an opaque FTO/ZnO/P3HT:PCBM/MoO3/Ag (–/40/130/10/100 nm) OSC, after theoretically achieving optimal values of optical and electrical parameters depending on Ag layer thickness. The transparency decreased with the increase of $$d_{m}$$ d m values for current DMD. Meanwhile, maximum transmittance and average visible transmittance (AVT) indicated the maximum values of over 92% for $$d_{m} ~$$ d m  = 4 and 8 nm, respectively. For ST-OSCs, the absorption and reflectance increased in the visible region by a wavelength of longer than 560 nm and in the whole near-infrared region by increasing $$d_{m}$$ d m up to 16 nm. Moreover, in the CIE chromaticity diagram, we reported a shift towards the D65 Planckian locus for colour coordinates of current ST-OSCs. Electrical analysis indicated the photogenerated current density and AVT values for $$d_{m} = 6$$ d m = 6  nm as 63.30 mA/cm2 and 38.52%, respectively. Thus, the theoretical and experimental comparison of optical and electrical characteristics confirmed that the manufactured structure is potentially conducive for a high-performance ST-OSC.

Dielectric/metal/dielectric plasmonic transparent structures play an important role in tailoring the high-optical performance of various optoelectronic devices. Though these structures are in significant demand in applications, including modification of the optical properties, average visible transmittance (AVT) and colour render index (CRI) and correlated colour temperature (CCT), obtaining optimal ones require precise thickness optimization. The overall objective of this study is the estimation of the optimal design concept of MoO3/Ag/WO3 (10/dAg/dWO3 nm) plasmonic structure. To explore the proper use in optoelectronic devices, we are motivated to conduct a rigorous optical evaluation on the thickness of layers. Having calculated optical characteristics and achieved the highest AVT of 97.3% for dAg = 4 nm and dWO3 = 6 nm by the transfer matrix method, it is quite possible to offer the potential of the structure acting as a transparent contact. Notably, the colour coordinates of the structure are x = 0.3110 and y = 0.3271, namely, it attributes very close to the Planckian locus. This superior colour performance displays that MoO3/Ag/WO3 shall undergo rapid development in neutral-colour windows and LED technologies. Structure with dAg = 6 nm and dWO3 = 16 nm exhibits the highest CRI of 98.58, thus identifying an optimal structure that can be integrated into LED lighting applications and imaging technologies. Besides the colour of structure with dAg = 4 nm and dWO3 = 8 nm is equal for D65 Standard Illuminant, the study reports that the range of CCTs are between 5000 and 6500 K. This optimization makes the structure employable as a near-daylight broadband illuminant. The study emphasizes that optimal MoO3/Ag/WO3 plasmonic structures can be used effectively to boost optoelectronic devices' performance.

We investigate electronic transport properties of as-grown and annealed n-type modulationdoped Al 0.15 Ga 0.85 As/GaAs 1−x Bi x (x=0 and 0.04) quantum well (QW) structures using magnetotransport measurements in the temperature range 4.2 K and 60 K and at magnetic fields up to 18 T. Thermal annealing process was applied at two different temperatures, 700 °C and 350 °C during 60 s and 180 s, respectively. We find that electron effective mass and 2D electron density in as-grown Bi-containing sample are slightly lower than that in Bi-free one. Furthermore, quantum electron mobility and quantum scattering time are observed to be decreased in Bi-containing samples. The annealing process at 700 °C causes a slight increase in electron effective mass and 2D electron density. A negligible decrease in electron effective mass and an increase in 2D electron density are determined following annealing at 350 °C. The observed change in electron effective mass following thermal annealing process is attributed to changing 2D electron density in the samples. No improvement on quantum electron mobility and quantum scattering time are observed following thermal annealing at both process temperatures. We determine that one electron subband (e1) for as-grown and annealed (at 700 °C for 60 s) Bicontaining QWs and two electron subbands (e1 and e2) for the annealed (at 350 °C for 180 s) GaAsBi QW sample and the Bi-free QW sample contribute to electronic transport. Our results reveal that there is no significant direct effect of Bi on effective electron mass, but an indirect effect, in which Bi can provoke changes in 2D electron density and hence causes not to observe actual band-edge electron mass but a deviation from its band-edge value. Therefore, it can be concluded that dispersion curve of conduction band does not change as an effect of Bi incorporation in GaAs.

Semi-transparent organic solar cells’ (ST-OSCs) photovoltaic and high optical performance parameters are evaluated in innovative applications such as power-generating windows for buildings, automobiles, and aesthetic designs in architectural and industrial products. These parameters require the precision design of structures that optimize optical properties in the visible region and aim to achieve the required photon harvest in UV and IR. These designs can be realized by integrating wavelength-selective photonics-based systems into ST-OSC to increase localized absorption in wavelengths greater than 600 nm and NIR and provide modifiable optical properties. In this study, methodologically, we followed highly detailed light management engineering and transfer matrix method-based theoretical and experimental approaches. We discussed the optimal structures by evaluating color, color rendering index, correlated color temperature, and photovoltaic performances for ST-OSCs, including one-dimensional photonic crystal (1D-PC) designed at different resonance wavelengths (λB) and periods. Finally, by integrating fine-tuned (MgF2/MoO3)N 1D-PC, we report the inherently dark purple-red color of the P3HT:PCBM bulk-heterojunction-based ST-OSC neutralizes with the optimal state was 0.3248 and 0.3733 by adjusting close to the Planckian locus. We also enhanced short current density from 5.77 mA/cm2 to 6.12 mA/cm2 and PCE were increased by 7.34% from 1.77% to 1.90% designed for the N = 4 period and λB = 700 nm.

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