Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures

Çetinkaya, Çağlar; Çokduygulular, Erman; Nutku, Ferhat; Donmez, Omer; Puustinen, Janne; Hilska, Joonas; Erol, Ayşe; Guina, Mircea

doi:10.1016/j.jallcom.2017.12.261

Cited by 17 publications

(18 citation statements)

References 39 publications

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“…It is important to note that the buffer, barrier and cap layers of the studied SQW samples were p-type GaAs with Be doping concentration of 5 × 10 17 cm -3 , 1 × 10 18 cm -3 and 3 × 10 18 cm -3 for the samples B367, B369 and B372, respectively. The p-type doping of barrier layers was used in order to improve PL intensity as shown earlier [13,14]. The influence of Be concentration on the electronic structure and PL was investigated by numerical calculations presented in Figs.…”

Section: Photoluminescence Measurements and Discussionmentioning

confidence: 99%

Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

Dudutienė¹,

Jasinskas²,

Čechavičius³

et al. 2021

physics

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A set of single quantum well (SQW) samples of GaAs1-xBix with x ~ 0.1 and p-doped GaAs barriers grown by molecular beam epitaxy was investigated by the temperature-dependent photoluminescence (PL) spectroscopy. Those GaAsBi SQW structures showed a high crystalline quality, a smooth surface and sharp interfaces between the layers and exhibited a high PL intensity and a lower than 100 meV PL linewidth of QW structures. Temperature dependence of the optical transition energy was S-shape-free for all investigated structures and it was weaker than that of GaAs. An analysis of the carrier recombination mechanism was also carried out indicating that the radiative recombination is dominant even at room temperature. Moreover, numerical calculations revealed that a higher Be doping concentration leads to an increased overlap of the electron and heavy hole wave functions and determines a higher PL intensity.

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Section: Photoluminescence Measurements and Discussionmentioning

confidence: 99%

Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

Dudutienė¹,

Jasinskas²,

Čechavičius³

et al. 2021

physics

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“…Considering a spatial distribution of the Bi inside the layer, to identify band alignment of the GaAsBi alloy, we carried out excitation intensity dependent PL measurement at low temperature. Because, optical transitions such as excitonic, defect-to-defect, defect-to-band strongly depends on the excitation intensity [6,17,18]. It is expected that the optical transition under low excitation intensity is excitonic and/or defect-to-defect and/or defect-to-band and is band-to-band under high excitation intensity in defective materials.…”

Section: Resultsmentioning

confidence: 99%

“…After introducing VBAC, it is shown that Bi atom also affects the CBE of the GaAs [2][3][4]. Replacing a small fraction of As by Bi in GaAs results in a profound reduction in the band gap energy (Eg) of 60-90 meV/Bi%, accompanied by a rapid increase in the spin-orbit-splitting energy (∆so) [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure

Güneş

Donmez

Gümüş

et al. 2021

Physica B: Condensed Matter

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“…SCAPS is a onedimensional simulation tool with seven input semiconductor layers developed at the Department of Electronics and Information Systems, University of Gent, Belgium [23]. Furthermore, this software can measure precisely the open-circuit voltage, short-current density, quantum e ciency, ll factor, the band structure of heterojunctions, power conversion e ciency, spectral performance, electric eld distribution, temperature, capacitance-voltage, generation and recombination pro le, light bias, lighting from either the nside or p-side, and frequency spectroscopy [24] as compared to other simulation software such as; Aestimo [25], PC1D [26], GPVDM [27] AFORS-HET [28].…”

Section: Methodsmentioning

confidence: 99%

A novel design of CTZS/Si tandem solar cell: a numerical approach

et al. 2021

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Multijunction or tandem solar cells can split the solar spectrum over several subcells with different bandgaps to transform the sunlight into electricity more effectively than single-junction solar cells. The monolithic tandem design of third generation silicon solar energy materials is auspicious for photovoltaics.In this paper, the Simulation-based studies of copper zinc tin sul de/Silicon (CZTS/Si) tandem cells based on CZTS as an upper subcell and silicon as a lower subcell absorber layer have been performed using SCAPS-1D. This study aims to evaluate the CZTS tandem cells' performance based on the fact that both subcells are simulated to produce the best e ciency recorded at its bandgap. The Simulation and optimization of the single junction CZTS and Si solar cells were initially performed to t the state-of-art records e ciency of 11.65% and 18.7%, respectively. Further, both the upper and lower cell has evaluated at different thicknesses for tandem con guration after validation. Also, to obtain the current matching condition for tandem structure, the upper subcell's performance is investigated at different thickness ranges from 0.1 µm -1 µm while keeping the lower subcell thickness at 80µm. Thus, at optimized upper absorber thickness of 0.191 µm and lower subcell 80 µm at transmitted spectrum the current matching condition obtained and gave an e ciency of 10.6% and 11.9%, respectively. The maximum e ciency of ~ 23 is obtained for tandem design with enhancing open circuit voltage 1.4 V.

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Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures

Cited by 17 publications

References 39 publications

Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure

A novel design of CTZS/Si tandem solar cell: a numerical approach

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