We conducted the present study to design and manufacture a semi-transparent organic solar cell (ST-OSC). First, we formed a transparent top contact as MoO3/Ag/MoO3 in a dielectric/metal/dielectric (DMD) structure. We performed the production of an FTO/ZnO/P3HT:PCBM/MoO3/Ag/MoO3 ST-OSC by integrating MoO3/Ag/MoO3 (10/$$d_{m}$$ d m /$$d_{{od}}$$ d od nm) instead of an Ag electrode in an opaque FTO/ZnO/P3HT:PCBM/MoO3/Ag (–/40/130/10/100 nm) OSC, after theoretically achieving optimal values of optical and electrical parameters depending on Ag layer thickness. The transparency decreased with the increase of $$d_{m}$$ d m values for current DMD. Meanwhile, maximum transmittance and average visible transmittance (AVT) indicated the maximum values of over 92% for $$d_{m} ~$$ d m = 4 and 8 nm, respectively. For ST-OSCs, the absorption and reflectance increased in the visible region by a wavelength of longer than 560 nm and in the whole near-infrared region by increasing $$d_{m}$$ d m up to 16 nm. Moreover, in the CIE chromaticity diagram, we reported a shift towards the D65 Planckian locus for colour coordinates of current ST-OSCs. Electrical analysis indicated the photogenerated current density and AVT values for $$d_{m} = 6$$ d m = 6 nm as 63.30 mA/cm2 and 38.52%, respectively. Thus, the theoretical and experimental comparison of optical and electrical characteristics confirmed that the manufactured structure is potentially conducive for a high-performance ST-OSC.
Dielectric/metal/dielectric plasmonic transparent structures play an important role in tailoring the high-optical performance of various optoelectronic devices. Though these structures are in significant demand in applications, including modification of the optical properties, average visible transmittance (AVT) and colour render index (CRI) and correlated colour temperature (CCT), obtaining optimal ones require precise thickness optimization. The overall objective of this study is the estimation of the optimal design concept of MoO3/Ag/WO3 (10/dAg/dWO3 nm) plasmonic structure. To explore the proper use in optoelectronic devices, we are motivated to conduct a rigorous optical evaluation on the thickness of layers. Having calculated optical characteristics and achieved the highest AVT of 97.3% for dAg = 4 nm and dWO3 = 6 nm by the transfer matrix method, it is quite possible to offer the potential of the structure acting as a transparent contact. Notably, the colour coordinates of the structure are x = 0.3110 and y = 0.3271, namely, it attributes very close to the Planckian locus. This superior colour performance displays that MoO3/Ag/WO3 shall undergo rapid development in neutral-colour windows and LED technologies. Structure with dAg = 6 nm and dWO3 = 16 nm exhibits the highest CRI of 98.58, thus identifying an optimal structure that can be integrated into LED lighting applications and imaging technologies. Besides the colour of structure with dAg = 4 nm and dWO3 = 8 nm is equal for D65 Standard Illuminant, the study reports that the range of CCTs are between 5000 and 6500 K. This optimization makes the structure employable as a near-daylight broadband illuminant. The study emphasizes that optimal MoO3/Ag/WO3 plasmonic structures can be used effectively to boost optoelectronic devices' performance.
In this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/Zinc acetate doped polyvinyl alcohol/n-Si Schottky barrier diodes (SBDs) have been investigated over the temperature range of 80-400 K. The values of zero-bias barrier height evaluated from forward and reverse bias I-V data, (ФBFo) and (ФBRo), increase with increasing temperature, and a discrepancy is observed between the values of ФBFo and ФBRo. Because the apparent barrier height (BH) seen from metal to semiconductor is higher than the one seen from semiconductor to metal, the obtained value of ФBFo is always greater than ФBRo value. The difference between them is almost the same as the Fermi energy level. The crossing of the experimental forward bias semilogarithmic ln I-V plots appears as an abnormality when compared to the conventional behavior of ideal SBDs. This behavior was attributed to the lack of free charge at a low temperature and could be expected in the temperature region where there is no carrier freezing out, which is non-negligible at low temperatures. Prior to intersection, the voltage dependent value of resistance (Ri) obtained from Ohm’s law decreases with increasing temperature, but it begins to increase after this intersection point. Such an increase in ФBo and series resistance (Rs) with temperature corresponding to high voltage region is in obvious disagreement with the reported negative temperature coefficients. However, the value of shunt resistance (Rsh) corresponding to a low or negative voltage region decreases with increasing temperature. In addition, the temperature dependent energy density distribution profiles of interface states (Nss) were obtained from forward bias I-V measurements by taking into account the bias dependence of the effective barrier height (Фe) and Rs of the device, and the values of Nss without considering Rs are almost one order of magnitude larger than Nss when considering Rs value.
Semi-transparent organic solar cells’ (ST-OSCs) photovoltaic and high optical performance parameters are evaluated in innovative applications such as power-generating windows for buildings, automobiles, and aesthetic designs in architectural and industrial products. These parameters require the precision design of structures that optimize optical properties in the visible region and aim to achieve the required photon harvest in UV and IR. These designs can be realized by integrating wavelength-selective photonics-based systems into ST-OSC to increase localized absorption in wavelengths greater than 600 nm and NIR and provide modifiable optical properties. In this study, methodologically, we followed highly detailed light management engineering and transfer matrix method-based theoretical and experimental approaches. We discussed the optimal structures by evaluating color, color rendering index, correlated color temperature, and photovoltaic performances for ST-OSCs, including one-dimensional photonic crystal (1D-PC) designed at different resonance wavelengths (λB) and periods. Finally, by integrating fine-tuned (MgF2/MoO3)N 1D-PC, we report the inherently dark purple-red color of the P3HT:PCBM bulk-heterojunction-based ST-OSC neutralizes with the optimal state was 0.3248 and 0.3733 by adjusting close to the Planckian locus. We also enhanced short current density from 5.77 mA/cm2 to 6.12 mA/cm2 and PCE were increased by 7.34% from 1.77% to 1.90% designed for the N = 4 period and λB = 700 nm.
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