Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

Abstract

In this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/Zinc acetate doped polyvinyl alcohol/n-Si Schottky barrier diodes (SBDs) have been investigated over the temperature range of 80-400 K. The values of zero-bias barrier height evaluated from forward and reverse bias I-V data, (ФBFo) and (ФBRo), increase with increasing temperature, and a discrepancy is observed between the values of ФBFo and ФBRo. Because the apparent barrier height (BH) seen from metal to semiconductor is higher than the one seen from semiconductor to metal, the obtained value of ФBFo is always greater than ФBRo value. The difference between them is almost the same as the Fermi energy level. The crossing of the experimental forward bias semilogarithmic ln I-V plots appears as an abnormality when compared to the conventional behavior of ideal SBDs. This behavior was attributed to the lack of free charge at a low temperature and could be expected in the temperature region where there is no carrier freezing out, which is non-negligible at low temperatures. Prior to intersection, the voltage dependent value of resistance (Ri) obtained from Ohm’s law decreases with increasing temperature, but it begins to increase after this intersection point. Such an increase in ФBo and series resistance (Rs) with temperature corresponding to high voltage region is in obvious disagreement with the reported negative temperature coefficients. However, the value of shunt resistance (Rsh) corresponding to a low or negative voltage region decreases with increasing temperature. In addition, the temperature dependent energy density distribution profiles of interface states (Nss) were obtained from forward bias I-V measurements by taking into account the bias dependence of the effective barrier height (Фe) and Rs of the device, and the values of Nss without considering Rs are almost one order of magnitude larger than Nss when considering Rs value.

Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions

“…According to the typical diode characteristics, it can be concluded that the film formed a robust Schottky contact with the P-Silicon substrate. The curve is also in good accordance with Richardson-Dushman thermionic emission theory [10,11]. It is worth noting that the light was incident from the Si substrate side, in order to study the Bi2Se3/H-Si heterostructure.…”

Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

“…Ideality factor greater than unity is generally attributed to the presence of bias-dependent Schottky barrier height. The bias-dependent BH arises due to defects, interfacial layer and interface inhomogeneities [2,14]. The larger R s values in the modified diode may be due to the extra resistance offered by organic interlayer.…”

“…Integrating organic molecules with semiconductors has opened wide opportunities in many areas of bioengineering, sensing, etc., which are difficult to achieve by either one alone [1]. In this context, modification of M-S contacts by organic molecules is noteworthy [2]. A thin molecular overlayer on the semiconductor can drastically modify the surface electronic properties of the semiconductor by reconstruction or creating an interfacial dipole layer [3,4].…”

“…This leads to Fermi level pinning, thereby reducing its performance drastically and limiting its application to be used as tailor-made devices. However, the presence of an interfacial layer between the metal contact and the semiconductor can lead to change in band alignment by changing the barrier height (BH) [2,[10][11][12][13][14]. This change is related to many parameters such as the type of the chosen organic compound and its formation, its thickness, the process of surface preparation, the impurity concentration of a semiconductor and the interfacial layerinduced dipole at the M-S interface [13][14][15][16].…”

Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures

“…The intersecting voltage values are at nearly 1.5 V and 2.7 V for SC and DC heterostructures, respectively. The intersection behavior of the I-V curves of Schottky barrier diodes (SBDs) measured at different temperatures were discussed by some of the authors in their theoretical and experimental studies [26][27][28][29][30][31]. Among these study, Chand [26] argues that the intersection behaviors of the ln(I)-V curves are an inherent property even of homogeneous SBDs of constant barrier height and are normally hidden due to saturation in current caused by series resistance.…”